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MPF102D74Z PDF预览

MPF102D74Z

更新时间: 2024-11-24 20:02:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
7页 288K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-92

MPF102D74Z 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
HTS代码:8541.21.00.95风险等级:5.75
Is Samacsys:N配置:SINGLE
FET 技术:JUNCTION最大反馈电容 (Crss):3 pF
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MPF102D74Z 数据手册

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MPF102  
G
S
TO-92  
D
N-Channel RF Amplifier  
This device is designed for electronic switching  
Applications such as low ON resistance analog switching.  
Sourced from Process 50.  
Absolute Maximum Ratings * TA=25 degree C unless otherwise noted  
Symbol  
VDG  
VGS  
Parameter  
Drain-Gate Voltage  
Gate-Source Voltage  
Value  
25  
-25  
Units  
V
V
IGF  
TJ,Tstg  
Forward Gate Current  
Operating and Storage Junction Temperature Range  
10  
mA  
degree C  
-55 to + 155  
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES :  
1) These rating are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
Symbol Characteristic  
Total Device Dissipation  
TA = 25 degrees C unless otherwise noted.  
Max  
Units  
mW  
mW/degrees C  
PD  
350  
2.8  
Derate above 25 degrees C  
Thermal Resistance, Junction to Case  
degrees C/W  
degrees C/W  
RqJC  
RqJA  
125  
357  
Thermal Resistance, Junction to Ambient  
* Device mounted on FR-4 PCB 1.5” X 1.6” X 0.06”  
ã 1999 Fairchild Semiconductor Corporation  

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