Datasheet > MPF102D75Z

MPF102D75Z

更新时间： 2024-11-27 20:02:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关晶体管
页数	文件大小	规格书
7页	288K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-92

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技术参数
数据手册

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MPF102D75Z 技术参数

生命周期：	Obsolete	包装说明：	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code：	unknown	HTS代码：	8541.21.00.95
风险等级：	5.75	配置：	SINGLE
FET 技术：	JUNCTION	最大反馈电容 (Crss)：	3 pF
JEDEC-95代码：	TO-92	JESD-30 代码：	O-PBCY-T3
元件数量：	1	端子数量：	3
工作模式：	DEPLETION MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	CYLINDRICAL	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	BOTTOM
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

MPF102D75Z 数据手册

MPF102

TO-92

N-Channel RF Amplifier

This device is designed for electronic switching

Applications such as low ON resistance analog switching.

Sourced from Process 50.

Absolute Maximum Ratings * TA=25 degree C unless otherwise noted

Symbol

VDG

VGS

Parameter

Drain-Gate Voltage

Gate-Source Voltage

Value

-25

Units

IGF

TJ,Tstg

Forward Gate Current

Operating and Storage Junction Temperature Range

degree C

-55 to + 155

* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES :

1) These rating are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol Characteristic

Total Device Dissipation

TA = 25 degrees C unless otherwise noted.

Max

Units

mW/degrees C

350

2.8

Derate above 25 degrees C

Thermal Resistance, Junction to Case

degrees C/W

RqJC

RqJA

125

357

Thermal Resistance, Junction to Ambient

* Device mounted on FR-4 PCB 1.5” X 1.6” X 0.06”

ã 1999 Fairchild Semiconductor Corporation

12 3 4 5 6 7

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