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MP86950 PDF预览

MP86950

更新时间: 2024-04-09 18:59:59
品牌 Logo 应用领域
芯源 - MPS 栅极驱动驱动器
页数 文件大小 规格书
15页 988K
描述
Intelli-Phase? 解决方案,集成内部功率 MOSFET 和栅极驱动器的单片半桥

MP86950 数据手册

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ELECTRICAL CHARACTERISTICS  
VIN = 12V, VDRV = VDD = VEN = 3.3V, tested at TA = 25°C for typical values and TJ = -40°C to +125°C  
for minimum and maximum values, unless otherwise noted.  
Parameter  
Symbol Condition  
Min  
Typ  
Max  
Units  
IIN shutdown  
IVIN_OFF EN = low  
40  
μA  
VIN under-voltage  
lockout (UVLO) rising  
threshold  
2.5  
3.0  
V
VIN UVLO hysteresis  
threshold  
600  
mV  
IVDRV  
IVDRV  
EN = low  
60  
μA  
Quiescent current  
PWM = low  
4
5.08  
mA  
VDD voltage UVLO rising  
threshold  
2.75  
2.95  
V
mV  
A
VDD voltage UVLO  
hysteresis threshold  
275  
75  
-30  
40  
4
High-side (HS) current  
limit (5)  
ILIM_FLT Cycle-by-cycle, up to four cycles  
Low-side (LS) current  
limit (5)  
Negative cycle-by-cycle current  
limit, no fault report  
A
Negative LS current limit  
off time (5)  
ns  
HS current limit  
times  
shutdown counter (5)  
EN input low voltage  
EN input high voltage  
Dead time rising (5)  
0.8  
V
V
2.30  
3
6
ns  
ns  
ns  
Positive inductor current  
Negative inductor current  
Dead time falling (5)  
35  
PWM high to SW rising  
delay (5)  
tRISING  
15  
15  
ns  
ns  
PWM low to SW falling  
delay (5)  
tFALLING  
tLT  
tTL  
tHT  
tTH  
40  
20  
40  
20  
ns  
ns  
ns  
ns  
PWM tri-state to SW Hi-Z  
delay (5)  
MP86950 Rev. 1.0  
12/18/2020  
www.MonolithicPower.com  
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.  
© 2020 MPS. All Rights Reserved.  
5

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