Datasheet > MP6K11_11

MP6K11_11

更新时间： 2024-02-21 12:45:00

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
7页	1191K
描述
4V Drive Nch Nch MOSFET

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中文翻译

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数据手册

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MP6K11_11 数据手册

Data Sheet

4V Drive Nch + Nch MOSFET

MP6K11

 Structure

 Dimensions (Unit : mm)

Silicon N-channel MOSFET

MPT6

(Duel)

Features

(6)

(1)

(5)

(2)

(4)

(3)

1) Low on-resistance.

2) High power package(MPT6).

3) Low voltage drive(4V drive).

 Application

Switching

 Packaging specifications

 Inner circuit

(6)

(5)

(4)

Package

Taping

TCR

1000



Type

Code

∗1

Basic ordering unit (pieces)

MP6K11

∗2

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Drain

(4) Tr2 Source

(5) Tr2 Gate

(6) Tr1 Drain

 Absolute maximum ratings (Ta = 25C)

Parameter

∗1

(1)

(2)

(3)

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

Drain-source voltage

Gate-source voltage

20

3.5

12

1.6

Continuous

Drain current

Pulsed

I_DP

I_s

Continuous

Pulsed

Source current

(Body Diode)

I_sp

2.0

1.4

W / TOTAL

P_D

Power dissipation

W / ELEMENT

Channel temperature

Tch

150

C

Range of storage temperature

*1 Pw10s, Duty cycle1%

Tstg

55 to 150

*2 Mounted on a ceramic board.

www.rohm.com

2011.04 - Rev.A

1/6

12 3 4 5 6 7

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与MP6K11_11相关器件

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MP6K14	ROHM	获取价格	4V Drive Nch + Nch MOSFET
MP6K14TCR	ROHM	获取价格	Power Field-Effect Transistor, 8A I(D), 30V, 0.032ohm, 2-Element, N-Channel, Silicon, Meta
MP6K31	ROHM	获取价格	4V Drive Nch + Nch MOSFET
MP6K61	ROHM	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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