是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-F6 |
针数: | 6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
外壳连接: | DRAIN | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 8 A |
最大漏极电流 (ID): | 8 A | 最大漏源导通电阻: | 0.032 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F6 |
JESD-609代码: | e2 | 元件数量: | 2 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2 W | 最大脉冲漏极电流 (IDM): | 18 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | TIN COPPER |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MP6K31 | ROHM |
获取价格 |
4V Drive Nch + Nch MOSFET | |
MP6K61 | ROHM |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
MP6K62TR | ROHM |
获取价格 |
Power Field-Effect Transistor, 6A I(D), 30V, 0.047ohm, 2-Element, N-Channel, Silicon, Meta | |
MP6K65TR | ROHM |
获取价格 |
Power Field-Effect Transistor, 3.5A I(D), 30V, 0.15ohm, 2-Element, N-Channel, Silicon, Met | |
MP6KE100A | MICROSEMI |
获取价格 |
600W Transient Voltage Suppressor | |
MP6KE100A/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 85.5V V(RWM), Unidirectional, 1 Element, Silicon, PL | |
MP6KE100AE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 85.5V V(RWM), Unidirectional, 1 Element, Silicon, RO | |
MP6KE100AE3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 85.5V V(RWM), Unidirectional, 1 Element, Silicon, RO | |
MP6KE100AE3TR | MICROSEMI |
获取价格 |
600W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, T-18, 2 PIN | |
MP6KE100ATR | MICROSEMI |
获取价格 |
600W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, T-18, 2 PIN |