Datasheet > MP4209_07

MP4209_07

更新时间： 2024-11-12 04:14:51

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器开关脉冲
页数	文件大小	规格书
7页	173K
描述
High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MP4209_07 数据手册

MP4209

TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L²-π-MOSV in One)

MP4209

High Power, High Speed Switching Applications

Industrial Applications

Unit: mm

For Printer Head Pin Driver and Pulse Motor Driver

For Solenoid Driver

•

4-V gate drivability

Small package by full molding (SIP 10 pins)

High drain power dissipation (4-device operation)

: P = 4 W (Ta = 25°C)

•

Low drain-source ON resistance: R

= 0.28 Ω (typ.)

DS (ON)

High forward transfer admittance: |Y | = 3.5 S (typ.)

Low leakage current: I

= ±10 μA (max) (V

= 100 μA (max) (V

= ±16 V)

= 100 V)

GSS

DSS

•

Enhancement-mode: V = 0.8 to 2.0 V (V

= 10 V, I = 1 mA)

DS D

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

100

±20

DSS

JEDEC

JEITA

―

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

TOSHIBA

2-25A1C

Drain current

Weight: 2.1 g (typ.)

Pulse

Drain power dissipation

(1-device operation, Ta = 25°C)

2.0

4.0

Drain power dissipation

(4device operation, Ta = 25°C)

Single pulse avalanche energy

140

(Note 1)

Avalanche current

- device

operation

0.2

Repetitive avalanche

energy

(Note 2)

4device

operation

0.4

ART

Channel temperature

150

°C

Storage temperature range

stg

−55 to 150

Note 1: Condition for avalanche energy (single pulse) measurement

= 50 V, starting T = 25°C, L = 20 mH, R = 25 Ω, I = 3 A

Note 2: Repetitive rating; pulse width limited by maximum channel temperature

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Please handle with caution.

2006-10-27

12 3 4 5 6 7

中文翻译

下载PDF

与MP4209_07相关器件

型号	品牌	获取价格	描述	数据表
MP4210	TOSHIBA	获取价格	POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
MP4210_07	TOSHIBA	获取价格	High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor
MP4211	TOSHIBA	获取价格	POWER MOSFET MODULE SILICON P CHANNEL MOS TYPE
MP4211_07	TOSHIBA	获取价格	High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor
MP4212	TOSHIBA	获取价格	HIGH POWER SPEED SWITCHING APPLICATIONS H SWITCH DRIVER
MP4212_07	TOSHIBA	获取价格	High Power High Speed Switching Applications H-Switch Driver
MP42141	MPLUSE	获取价格	Silicon Bipolar Low Noise Microwave Transistors
MP4214100	MPLUSE	获取价格	Silicon Bipolar Low Noise Microwave Transistors
MP4214135	MPLUSE	获取价格	Silicon Bipolar Low Noise Microwave Transistors
MP42141-509	MPLUSE	获取价格	Silicon Bipolar Low Noise Microwave Transistors

与MP4209_07相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

8
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

9
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

MP4209_07

MP4209_07 数据手册

与MP4209_07相关器件

与MP4209_07相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MP4209_07

MP4209_07 数据手册

与MP4209_07相关器件

与MP4209_07相关文章

您还可以找

您在本页遇到什么问题？