Datasheet > MP4210_07

MP4210_07

更新时间： 2024-11-12 04:14:51

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器开关脉冲
页数	文件大小	规格书
7页	173K
描述
High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver

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MP4210_07 数据手册

MP4210

TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L²-π-MOSV inOne)

MP4210

High Power, High Speed Switching Applications

Industrial Applications

Unit: mm

For Printer Head Pin Driver and Pulse Motor Driver

For Solenoid Driver

•

4-V gate drivability

Small package by full molding (SIP 10 pins)

High drain power dissipation (4-device operation)

: P = 4 W (Ta = 25°C)

•

Low drain-source ON resistance: R

= 0.12 Ω (typ.)

DS (ON)

High forward transfer admittance: |Y | = 5.0 S (typ.)

Low leakage current: I

= ±10 μA (max) (V

= 100 μA (max) (V

= ±16 V)

= 60 V)

GSS

DSS

•

Enhancement-mode: V = 0.8 to 2.0 V (V

= 10 V, I = 1 mA)

DS D

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

±20

DSS

JEDEC

JEITA

―

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

TOSHIBA

2-25A1C

Drain current

Weight: 2.1 g (typ.)

Pulse

Drain power dissipation

(1-device operation, Ta = 25°C)

2.0

4.0

Drain power dissipation

(4-device operation, Ta = 25°C)

Single pulse avalanche energy

129

(Note 1)

Avalanche current

1-device

operation

0.2

Repetitive avalanche

energy

(Note 2)

4-device

operation

0.4

ART

Channel temperature

150

°C

Storage temperature range

stg

−55 to 150

Note 1: Condition for avalanche energy (single pulse) measurement

= 25 V, starting T = 25°C, L = 7 mH, R = 25 Ω, I = 5 A

Note 2: Repetitive rating; pulse width limited by maximum channel temperature

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Please handle with caution.

2006-10-27

12 3 4 5 6 7

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