MP42141 PDF预览

MP42141

更新时间: 2025-04-15 10:49:59
品牌 Logo 应用领域
MPLUSE 晶体晶体管微波
页数 文件大小 规格书
5页 126K
描述
Silicon Bipolar Low Noise Microwave Transistors

MP42141 数据手册

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Silicon Bipolar Low Noise  
Microwave Transistors  
MP42141  
Case Styles  
Features  
Low Intrinsic Noise Figure (2.3dB Typical @ 1.0 GHz)  
High Power Gain At 1.0 GHz – 18.0 dB Typical  
Gold Metalization  
Hermetic and Surface Mount Packages Available  
Can be Screened to JANTX, JANTXV Equivalent Levels  
ION Implanted arsenic Emitter for Consistent Performance  
Description  
This NPN Silicon transistor finds applications in low  
noise and medium power microwave amplifier circuitry.  
The MP42141 exhibits an excellent noise figure  
characteristic over the frequency range of .5 to 2 GHz.  
This transistor also features good high frequency current  
gain at medium current levels.  
Micro-X  
Applications  
RF amplifiers and low level oscillators.  
Specification Subject to Change Without Notice  
M-Pulse Microwave____________________________________________________________________________________  
1
576 Charcot Avemue, San Jose, California 95131  
Tel (408) 432-1480  
Fax (408)) 432-3440  

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