是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-CDFM-P12 |
针数: | 12 | Reach Compliance Code: | compliant |
风险等级: | 5.76 | 其他特性: | HIGH SPEED |
最大集电极电流 (IC): | 20 A | 集电极-发射极最大电压: | 600 V |
配置: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | JESD-30 代码: | R-CDFM-P12 |
元件数量: | 6 | 端子数量: | 12 |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MOD1008 | SENSITRON |
获取价格 |
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, MODULE-12 | |
MOD1008S | SENSITRON |
获取价格 |
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED PAC | |
MOD1009 | SENSITRON |
获取价格 |
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, | |
MOD1009S | SENSITRON |
获取价格 |
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED PAC | |
MOD100B | VISHAY |
获取价格 |
Power Field-Effect Transistor, 4-Element, Metal-oxide Semiconductor FET | |
MOD1010 | SENSITRON |
获取价格 |
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, MODULE-12 | |
MOD1010S | SENSITRON |
获取价格 |
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED PAC | |
MOD1011 | SENSITRON |
获取价格 |
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, | |
MOD1011S | SENSITRON |
获取价格 |
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED PAC | |
MOD1012S | SENSITRON |
获取价格 |
Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED PAC |