是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | MODULE |
包装说明: | FLANGE MOUNT, S-XDFM-P12 | 针数: | 12 |
Reach Compliance Code: | compliant | 风险等级: | 5.76 |
其他特性: | HIGH SPEED | 最大集电极电流 (IC): | 40 A |
集电极-发射极最大电压: | 600 V | 配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
JESD-30 代码: | S-XDFM-P12 | 元件数量: | 2 |
端子数量: | 12 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | SQUARE |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 340 ns |
标称接通时间 (ton): | 150 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MOD1008S | SENSITRON |
获取价格 |
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED PAC | |
MOD1009 | SENSITRON |
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Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, | |
MOD1009S | SENSITRON |
获取价格 |
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED PAC | |
MOD100B | VISHAY |
获取价格 |
Power Field-Effect Transistor, 4-Element, Metal-oxide Semiconductor FET | |
MOD1010 | SENSITRON |
获取价格 |
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, MODULE-12 | |
MOD1010S | SENSITRON |
获取价格 |
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED PAC | |
MOD1011 | SENSITRON |
获取价格 |
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, | |
MOD1011S | SENSITRON |
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Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED PAC | |
MOD1012S | SENSITRON |
获取价格 |
Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED PAC | |
MOD1013 | SENSITRON |
获取价格 |
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, |