Datasheet > MMZ09312B

MMZ09312B

更新时间： 2024-11-16 11:44:51

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管
页数	文件大小	规格书
20页	1173K
描述
Heterojunction Bipolar Transistor

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MMZ09312B 数据手册

Document Number: MMZ09312B

Rev. 1, 2/2012

Freescale Semiconductor

Technical Data

Heterojunction Bipolar Transistor

Technology (InGaP HBT)

MMZ09312BT1

High Efficiency/Linearity Amplifier

The MMZ09312B is a 2--stage high efficiency, Class AB InGaP HBT

amplifier designed for use as a linear driver amplifier in wireless base station

applications as well as an output stage in femtocell or repeater applications. It

is suitable for applications with frequencies from 400 to 1000 MHz such as

CDMA, GSM, LTE and ZigBee^Rat operating voltages from 3 to 5 Volts. The

amplifier is housed in a cost--effective, surface mount QFN plastic package.

400--1000 MHz, 31.7 dB

29.6 dBm

InGaP HBT

•

Typical Performance: V_CC1= V_CC2= V_BIAS= 5 Volts, I_CQ= 74 mA

ACPR

(dBc)

PAE

(%)

out

Frequency

900 MHz

750 MHz

(dBm)

(dB)

31.5

32.0

Test Signal

--50.0

26.0

15.3

IS--95 CDMA

17.5

LTE

10/20 MHz

CASE 2131--01

QFN 3x3

450 MHz

33.0

--40.0

57.0

ZigBee

PLASTIC

Features

•

Frequency: 400--1000 MHz

P1dB: 29.6 dBm @ 900 MHz

Power Gain: 31.7 dB @ 900 MHz

OIP3: 42 dBm @ 900 MHz

Active Bias Control (adjustable externally)

Single 3 to 5 Volt Supply

Performs Well with Digital Predistortion Systems

Single--ended Power Detector

Cost--effective QFN Surface Mount Package

In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel.

Table 1. Typical Performance ⁽¹⁾

Table 2. Maximum Ratings

Rating

Supply Voltage

Symbol

Value

Unit

450

MHz

900

MHz

Characteristic

Symbol

Unit

550

Small--Signal Gain (S21)

Input Return Loss (S11)

Output Return Loss (S22)

33.8

-- 2 2

-- 2 5

28.8

31.7

-- 1 5

-- 1 8

29.6

Supply Current

dBm

°C

IRL

ORL

P1dB

RF Input Power

Storage Temperature Range

stg

--65 to +150

150

Power Output @ 1dB

Compression

dBm

(2)

Junction Temperature

°C

2. For reliable operation, the junction temperature should not

1. V

= V

= 5 Vdc, T = 25°C, 50 ohm system, CW

BIAS A

CC1

CC2

exceed 150°C.

Application Circuit

Table 3. Thermal Characteristics

(3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

°C/W

Case Temperature 84°C, V = V

= V

= 5 Vdc

BIAS

CC1

CC2

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MMZ09312BT1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...20

中文翻译

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与MMZ09312B相关器件

型号	品牌	获取价格	描述	数据表
MMZ09312B_12	FREESCALE	获取价格	Heterojunction Bipolar Transistor
MMZ09332B	NXP	获取价格	InGaP HBT Linear Amplifier, 130-1000 MHz, 30 dB, 33 dBm
MMZ09332BT1	NXP	获取价格	InGaP HBT 400--1000 MHz, 29 dB 33 dBm
MMZ1005	TDK	获取价格	Ferrite Beads SMD
MMZ1005_09	TDK	获取价格	Chip Beads(SMD) For Signal Line
MMZ1005A102E	TDK	获取价格	Chip Beads(SMD) For Signal Line
MMZ1005A102ET000	TDK	获取价格	FERRITE BEAD 1 KOHM 0402 1LN
MMZ1005A102ETD25	TDK	获取价格	Ferrite Chip, 1 Function(s), 0.25A, EIA STD PACKAGE SIZE 0402, 2 PIN
MMZ1005A152E	TDK	获取价格	Ferrite Beads SMD
MMZ1005A152ET	TDK	获取价格	Ferrite Beads SMD

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