Datasheet > MMZ09332B

MMZ09332B

更新时间： 2024-03-03 10:11:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
28页	1201K
描述
InGaP HBT Linear Amplifier, 130-1000 MHz, 30 dB, 33 dBm

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MMZ09332B 数据手册

Document Number: MMZ09332B

Rev. 0, 8/2015

Freescale Semiconductor

Technical Data

Heterojunction Bipolar Transistor

Technology (InGaP HBT)

MMZ09332BT1

High Efficiency/Linearity Amplifier

The MMZ09332B is a 2--stage, high linearity InGaP HBT broadband amplifier

designed for femtocell, picocell, smart grid, W--CDMA, TD--SCDMA and LTE

wireless broadband applications. It provides exceptional linearity for LTE and

W--CDMA air interfaces with an ACPR of –50 dBc at an output power of up to

23 dBm, covering frequencies from 130 to 1000 MHz. It operates from a supply

voltage of 3 to 5 volts. The amplifier requires minimal external matching and

offers state--of--the--art reliability, ruggedness, temperature stability and ESD

performance.

130–1000 MHz, 30 dB, 33 dBm

InGaP HBT LINEAR AMPLIFIER



Typical PA Performance: V_CC1= V_CC2= V_BIAS= 5 Vdc, I_CQ= 140 mA

ACPR

(dBc)

(mA)

out

Frequency

748 MHz

942 MHz

(dBm)

(dB)

30.9

27.1

Test Signal

W--CDMA

–49.6

–50.4

315

QFN 3  3

240



Typical PA Performance: V_CC1= V_CC2= V_BIAS= 5 Vdc, I_CQ= 110 mA

(dB)

PAE

(%)

out

Frequency

(dBm)

Test Signal

450 MHz

32.3

37.2

45.5 @ 5 V

30.3 @ 3.6 V 26.3 @ 3.6 V 53.7 @ 3.6 V

760 MHz

32.2 30.8 40.0 @ 5 V

Features



Frequency: 130–1000 MHz

P1dB: 33 dBm, 450 to 1000 MHz

OIP3: up to 48 dBm @ 900 MHz

Excellent Linearity

Active Bias Control (adjustable externally)

Single 3 to 5 V Supply

Single--ended Power Detector

Cost--effective 12--pin 3 mm QFN Surface Mount Plastic Package

Power

Down

CC1

BA1 BA2 BIAS

ACTIVE BIAS WITH

POWER DOWN

INTERSTAGE

MATCH

INPUT

PREMATCH

OUTPUT

PREMATCH

CC2

out

OUTPUT POWER

DETECTOR

DET

Figure 1. Functional Block Diagram

MMZ09332BT1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...28

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