Datasheet > MMST3906

MMST3906

更新时间： 2024-11-11 18:09:35

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	496K
描述
SOT-323

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中文翻译

获取价格

数据手册

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MMST3906 数据手册

MMST3906

BIPOLAR TRANSISTOR (PNP)

FEATURES

 Complementary to MMST3904

 Excellent h_FELinearity

 Low Noise

 Surface Mount device

SOT-323

MECHANICAL DATA



Case: SOT-323

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

-40

Collector-Emitter Voltage

Emitter-Base Voltage

-5

Collector Current

Collector Power Dissipation

-200

200

625

°C/W

°C

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

150

Storage Temperature

TSTG

-55 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Symbol

Parameter

Collector-base breakdown voltage

Min Typ Max Unit

Conditions

I = -5uA I =0

V(BR)CBO

-60

-50

-5

，

Collector-emitter breakdown voltage V(BR)CEO

I_C= -1mA，I_B=0

I_E= -50uA，I_C=0

Emitter-base breakdown voltage

Collector cut-off current

Base cut-off current

V(BR)EBO

I_CEX

I_BL*

-50

nA V_CE= -30V,V_BE(OFF)= -3V

V_CE= -1V, I_C= -0.1mA

DC current gain

h_FE*

V_CE= -1V, I_C= -1mA

100

300

-0.2

-0.3

-0.85

-0.95

V_CE= -1V, I_C= -10mA

I_C= -10mA，I_B= -1mA

I_C= -50mA，I_B= -5mA

I_C= -10mA，I_B= -1mA

I_C= -50mA，I_B= -5mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

-0.65

V_BE(sat)

MHz V_CE=-20V,I_C=-10mA,f=100

Transition frequency

Collector output capacitance

Input capacitance

Delay time

Rise time

Storage time

f_T

C_ob

C_ib

t_d

t_r

t_S

250

MHz

V_CE= -5V, I_E=0, f=1

V_EB=-0.5V,I_C=0,f=1

4.5

225

MHz

V_CC=-3V, I_C=-10mA，

V_EB(OFF)=-0.5V,I_B1=-1mA

V_CC=-3V,I_C=-10mA

I_B1=I_B2=-1mA

Fall time

t_f

*Pulse test: pulse width≤300us,duty cycle≤2.0%

Marking: K5N

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