Datasheet > MMST4001

MMST4001

更新时间： 2024-01-17 06:45:50

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管
页数	文件大小	规格书
1页	130K
描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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MMST4001 数据手册

RoHS

MMST4401

SOT-323

1. BASE

MMST4401 TRANSISTOR (NPN)

FEATURES

2. EMITTER

1. 25¡ À0. 05

Power dissipation

3. COLLECTOR

P_CM:

0.2

W (Tamb=25℃)

2. 30¡ À0. 05

Collector current

I_CM:

0.6

Collector-base voltage

V_(BR)CBO

Operating and storage junction temperature range

T_J,T_stg: -55℃ to +150℃

Unit: mm

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

MAX

UNIT

V_(BR)CBO

Ic=100µA , I_E=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C= 1mA , I_B=0

I_E=100µA, I_C=0

V_CB=35V, I_E=0

V_CE=35V, I_B=0

V_EB=5V, I_C=0

0.1

300

µA

I_CEO

Collector cut-off current

I_EBO

Emitter cut-off current

h_FE(1)

_CE=1V, I_C= 150mA

_CE=2V, I_C= 500mA

100

DC current gain

h_FE(2)

V_CE(sat)

V_BE(sat)

I_C=150 mA, I_B=15mA

I_C= 150 mA, I_B=15mA

0.4

Collector-emitter saturation voltage

Base-emitter saturation voltage

0.95

V_CE= 10V, I_C= 20mA

f = 100MHz

250

MHz

Transition frequency

Output Capacitance

f _T

V_CB=10V, I_E= 0

f=1MHz

6.5

C_ob

Delay time

Rise time

t_d

t_r

V_CC=30V, V_BE=2V

I_C=150mA, I_B1=15mA

WEJ ELECTRONIC CO.,LTD

225

Storage time

t_S

V_CC=30V, I_C=150mA

Fall time

t_f

I_B1= I_B2= 15mA

Marking: K3X

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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