Datasheet > MMST3906_11

MMST3906_11

更新时间： 2024-02-14 18:53:22

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
3页	197K
描述
PNP Small Signal Transistors

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中文翻译

获取价格

数据手册

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MMST3906_11 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MMST3906

Micro Commercial Components

Features

•

Epitaxial Planar Die Construction

Complementary NPN Type available (MMST3904)

Ultra-small surface mount package

PNP Small Signal

Transistors

Marking : K5N

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

SOT-323

Maxim um Ratings

Symbol

V_CEO

V_CBO

V_EBO

I_C

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Rating

5.0

200

-55 to +150

Unit

Collector Current-Continuous ⁽¹⁾

Power dissipation ⁽¹⁾

^OC

P_C

T_J

T_STG

Junction Temperature

Storage Temperature

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS ⁽²⁾

DIMENSIONS

INCHES

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CEX

Collector-Emitter Breakdown Voltage

5.0

---

Vdc

(I =1.0mAdc, I_B=0)

DIM

MIN

.071

.045

.079

MAX

.087

.053

.087

MIN

1.80

1.15

2.00

MAX

2.20

1.35

2.20

NOTE

Collector-Base Breakdown Voltage

(I =10uAdc, I_E=0)

Collector-Emitter Breakdown Voltage

Vdc

.026 Nominal

0.65Nominal

1.20

.30

.000

.90

.100

.30

(I =10uAdc, I_C=0)

.047

.055

.016

.004

.039

.010

.016

1.40

.40

.100

1.00

.250

.40

.012

.000

.035

.004

.012

Collector-Base Cutoff Current

(V_CE=30Vdc, V_EB(OFF)=3.0Vdc)

nAdc

I_BL

Emitter-Base Cutoff Current

---

(V_CE=30Vdc, V_EB(OFF)=3.0Vdc)

ON CHARACTERISTICS⁽²⁾

Suggested Solder

Pad Layout

0.70

h_FE

DC Current Gain

(I =100uAdc, V_CE=1.0Vdc)

100

---

300

---

(I =1.0mAdc, V_CE=1.0Vdc)

---

(I =10mAdc, V_CE=1.0Vdc)

0.90

(I =50mAdc, V_CE=1.0Vdc)

(I =500mAdc, V_CE=1.0Vdc)

Collector-Emitter Saturation Voltage

---

1.90

V_CE(sat)

(I =10mAdc, I_B=1.0mAdc)

---

0.20

0.30

Vdc

(I =50mAdc, I_B=5.0mAdc)

V_BE(sat)

Base-Emitter Saturation Voltage

0.65

(I =10mAdc, I_B=1.0mAdc)

0.65

---

0.85

0.95

(I =50mAdc, I_B=5.0mAdc)

0.65

Note: 1. Valid provided that terminals are kept at ambient temperature.

2. Pulse test: Pulse width<300us, duty cycle<2%

www.mccsemi.com

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Revision: A

2011/01/01

12 3

中文翻译

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与MMST3906_11相关器件

型号	品牌	获取价格	描述	数据表
MMST3906_15	WINNERJOIN	获取价格	PNP TRANSISTOR
MMST3906_2	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMST3906-13	DIODES	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA S
MMST3906-7-F	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMST3906HE3	MCC	获取价格	Tape: 3K/Reel , 120K/Ctn;
MMST3906Q	YANGJIE	获取价格	SOT-323
MMST3906T146	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 200MA I(C) \| SOT-346
MMST3906T147	ROHM	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,
MMST3906T246	ROHM	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL
MMST3906T247	ROHM	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL

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