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MMST4126-7 PDF预览

MMST4126-7

更新时间： 2024-02-10 13:36:58
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
3页 119K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3

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MMST4126-7 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：19 weeks
风险等级：5.37Is Samacsys：N
最大集电极电流 (IC)：0.2 A集电极-发射极最大电压：25 V
配置：SINGLE最小直流电流增益 (hFE)：60
JESD-30 代码：R-PDSO-G3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：PNP最大功率耗散 (Abs)：0.2 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：250 MHz
Base Number Matches：1

MMST4126-7 数据手册

 浏览型号MMST4126-7的Datasheet PDF文件第2页浏览型号MMST4126-7的Datasheet PDF文件第3页 
MMST4126  
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
•
•
•
•
•
•
Epitaxial Planar Die Construction  
A
SOT-323  
Complementary NPN Type Available (MMST4124)  
Ideal for Medium Power Amplification and Switching  
Ultra-Small Surface Mount Package  
Lead Free/RoHS Compliant (Note 2)  
"Green" Device (Notes 3 and 4)  
Dim  
A
B
C
D
E
Min  
0.25  
1.15  
2.00  
Max  
0.40  
1.35  
2.20  
C
C
B
B
E
0.65 Nominal  
G
H
Mechanical Data  
0.30  
1.20  
1.80  
0.0  
0.40  
1.40  
2.20  
0.10  
1.00  
0.40  
0.18  
8°  
•
•
Case: SOT-323  
G
H
J
Case Material: Molded Plastic, "Green" Molding  
Compound, Note 4. UL Flammability Classification  
Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over  
Alloy 42 leadframe).  
K
J
M
•
•
•
•
K
L
0.90  
0.25  
0.10  
0°  
L
D
F
C
M
α
•
•
•
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.006 grams (approximate)  
All Dimensions in mm  
E
B
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current - Continuous (Note 1)  
Power Dissipation (Note 1)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-25  
-25  
-4.0  
-200  
Unit  
V
V
V
mA  
mW  
200  
Pd  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
625  
°C/W  
°C  
Rθ  
Tj, TSTG  
JA  
-55 to +150  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 5)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
Symbol  
Min  
Max  
Unit  
Test Condition  
-25  
-25  
-4.0  
⎯
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
⎯
⎯
⎯
IC = -10μA, IE = 0  
IC = -1.0mA, IB = 0  
IE = -10μA, IC = 0  
VCB = -20V, IE = 0V  
VEB = -3.0V, IC = 0V  
V
-50  
nA  
nA  
Emitter Cutoff Current  
-50  
IEBO  
⎯
ON CHARACTERISTICS (Note 5)  
360  
⎯
-0.40  
-0.95  
120  
60  
IC = -2.0mA, VCE = -1.0V  
IC = -50mA, VCE = -1.0V  
IC = -50mA, IB = -5.0mA  
IC = -50mA, IB = -5.0mA  
DC Current Gain  
hFE  
⎯
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
V
V
VCE(SAT)  
VBE(SAT)  
⎯
⎯
4.5  
10  
pF  
pF  
Cobo  
Cibo  
hfe  
⎯
⎯
120  
VCB = -5.0V, f = 1.0MHz, IE = 0  
VEB = -0.5V, f = 1.0MHz, IC = 0  
VCE = 1.0V, IC = -2.0mA, f = 1.0kHz  
VCE = -20V, IC = -10mA, f = 100MHz  
VCE = -5.0V, IC = -100μA,  
Input Capacitance  
Small Signal Current Gain  
480  
⎯
⎯
MHz  
Current Gain-Bandwidth Product  
250  
fT  
Noise Figure  
NF  
4.0  
dB  
⎯
RS = 1.0kΩ, f = 1.0kHz  
Note:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can  
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
5. Short duration pulse test used to minimize self-heating effect.  
MMST4126  
© Diodes Incorporated  
DS30161 Rev. 7 - 2  
1 of 3  
www.diodes.com  
123

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MMST4126-7 替代型号

型号 品牌 替代类型 描述 数据表
MMST4126-7-F DIODES

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