Datasheet > MMST3906

MMST3906

更新时间： 2024-11-11 14:52:27

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	780K
描述
SOT-323

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中文翻译

获取价格

数据手册

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MMST3906 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors

MMST3906 TRANSISTOR (PNP)

SOT–323

FEATURES

 Complementary to MMST3904

MARKING:K5N

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

1. BASE

Collector-Base Voltage

-40

2. EMITTER

3. COLLECTOR

Collector-Emitter Voltage

-40

Emitter-Base Voltage

-5

Collector Current

-200

200

625

℃/W

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

P_C

R_ΘJA

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_BL*

I_C=-10µA, I_E=0

-40

Collector-base breakdown voltage

I_C=-1mA, I_B=0

-40

-5

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Base cut-off current

I_E=-10µA, I_C=0

V_CE=-30V, V_EB(Off)=-3V

V_CE=-1V, I_C=-100µA

V_CE=-1V, I_C=-1mA

-50

I_CEX

Collector cut-off current

h_FE*

DC current gain

V_CE=-1V, I_C=-10mA

I_C=-10mA, I_B=-1mA

I_C=-50mA, I_B=-5mA

I_C=-10mA, I_B=-1mA

I_C=-50mA, I_B=-5mA

V_CE=-20V,I_C=-10mA , f=100MHz

V_CB=-5V, I_E=0, f=1MHz

V_EB=-0.5V, I_E=0, f=1MHz

V_CC=-3V, V_BE(off)=-0.5V, I_C=-10mA,

I_B1=-1mA

100

300

-0.2

V_CE(sat)

Collector-emitter saturation voltage

Base-emitter saturation voltage

-0.3

-0.65

250

-0.85

-0.95

V_BE(sat)

f_T

C_ob

C_ib

t_d

MHz

Transition frequency

Collector output capacitance

Delay time

4.5

t_r

Rise time

t_s

225

Storage time

V_CC=3V, I_C=-10mA, I_B1= I_B2=-1mA

t_f

Fall time

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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