Datasheet > MMST3906

MMST3906

更新时间： 2024-11-10 12:36:43

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管光电二极管
页数	文件大小	规格书
1页	130K
描述
TRANSISTOR (PNP)

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中文翻译

获取价格

数据手册

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MMST3906 数据手册

RoHS

MMST3906

TRANSISTOR (PNP)

SOT-323

1. BASE

FEATURES

2. EMITTER

1. 25¡ À0. 05

Power dissipation

3. COLLECTOR

P_CM:

0.2

W (Tamb=25℃)

2. 30¡ À0. 05

Collector current

I_CM:

-0.2

-40

Collector-base voltage

V_{(BR) CBO}

Operating and storage junction temperature range

Unit: mm

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic= -10µA, I_E=0

Ic= -1mA, I_B=0

MIN

-40

-5

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E= -10µA, I_C=0

V_CB= -40V, I_E=0

-0.1

300

µA

I_CEO

V_CE= -40V, I_B=0

Collector cut-off current

I_EBO

V_EB= -5V, I_C=0

Emitter cut-off current

h_FE(1)

V_CE=- 1V, I_C= -10mA

V_CE= -1V, I_C=- 50mA

I_C=-50 mA, I_B= -5mA

I_C= -50 mA, I_B= -5mA

100

DC current gain

h_FE(2)

V_CE(sat)

V_BE(sat)

-0.3

Collector-emitter saturation voltage

Base-emitter saturation voltage

-0.95

V_CE= -20V, I_C= -10mA

f=100MHz

300

MHz

Transition frequency

Output Capacitance

f_T

V_CB=-5V, I_E= 0

f=1MHz

4.5

C_ob

Delay time

Rise time

t_d

t_r

V_CC=-3V, I_C=-10mA

V_BE(off)=-0.5V, I_B1=-1mA

WEJ ELECTRONIC CO.,LTD

225

Storage time

t_S

V_CC=-3V, I_C=-10mA

I_B1= I_B2= -1mA

Fall time

t_f

Marking

K5N

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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