MMSF7N03HDR2 PDF预览

MMSF7N03HDR2

更新时间: 2025-08-03 19:47:31
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
12页 118K
描述
8.2A, 30V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, MINIATURE, 751-05, SOP-8

MMSF7N03HDR2 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT包装说明:SOP-8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.31
其他特性:ULTRA LOW RESISTANCE雪崩能效等级(Eas):450 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):8.2 A最大漏极电流 (ID):8.2 A
最大漏源导通电阻:0.028 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2.5 W
最大脉冲漏极电流 (IDM):50 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MMSF7N03HDR2 数据手册

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MMSF7N03HD  
Preferred Device  
Power MOSFET  
7 Amps, 30 Volts  
N–Channel SO–8  
These miniature surface mount MOSFETs feature ultra low R  
DS(on)  
and true logic level performance. They are capable of withstanding  
high energy in the avalanche and commutation modes and the  
drain–to–source diode has a very low reverse recovery time.  
MiniMOSt devices are designed for use in low voltage, high speed  
switching applications where power efficiency is important. Typical  
applications are dc–dc converters, and power management in portable  
and battery powered products such as computers, printers, cellular and  
cordless phones. They can also be used for low voltage motor controls  
in mass storage products such as disk drives and tape drives. The  
avalanche energy is specified to eliminate the guesswork in designs  
where inductive loads are switched and offer additional safety margin  
against unexpected voltage transients.  
http://onsemi.com  
7 AMPERES  
30 VOLTS  
R
= 28 mW  
DS(on)  
N–Channel  
D
Ultra Low R  
Provides Higher Efficiency and Extends Battery  
DS(on)  
G
Life  
Logic Level Gate Drive – Can Be Driven by Logic ICs  
Miniature SO–8 Surface Mount Package – Saves Board Space  
Diode Is Characterized for Use In Bridge Circuits  
Diode Exhibits High Speed, With Soft Recovery  
S
MARKING  
DIAGRAM  
I  
Specified at Elevated Temperature  
DSS  
Avalanche Energy Specified  
Mounting Information for SO–8 Package Provided  
SO–8  
CASE 751  
STYLE 13  
S7N03  
LYWW  
8
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
1
Rating  
Drain–to–Source Voltage  
Drain–to–Gate Voltage (R  
Symbol  
Value  
30  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
DSS  
L
Y
WW  
= Location Code  
= Year  
= Work Week  
= 1.0 M)  
V
DGR  
30  
GS  
Gate–to–Source Voltage – Continuous  
Drain Current – Continuous @ T = 25°C  
V
± 20  
GS  
I
I
8.2  
5.6  
50  
A
D
D
Drain Current – Continuous @ T = 100°C  
A
PIN ASSIGNMENT  
Drain Current – Single Pulse (t 10 µs)  
I
Apk  
p
DM  
Total Power Dissipation @ T = 25°C  
(Note 1.)  
P
2.5  
Watts  
N–C  
Drain  
Drain  
Drain  
A
D
1
2
3
4
8
7
6
5
Source  
Source  
Operating and Storage Temperature Range  
T , T  
J stg  
– 55 to  
150  
°C  
Gate  
Drain  
Single Pulse Drain–to–Source Avalanche  
E
AS  
450  
mJ  
Top View  
Energy – Starting T = 25°C  
J
(V  
= 30 Vdc, V  
= 5.0 Vdc, Peak  
DD  
GS  
= 15 Apk, L = 4.0 mH, R = 25 )  
I
L
G
ORDERING INFORMATION  
Thermal Resistance – Junction to Ambient  
(Note 1.)  
R
50  
°C/W  
°C  
θJA  
Device  
Package  
Shipping  
2500 Tape & Reel  
Maximum Lead Temperature for Soldering  
Purposes, 1/8from case for 10 seconds  
T
260  
L
MMSF7N03HDR2  
SO–8  
1. Mounted on 2square FR4 board (1sq. 2 oz. Cu 0.06thick single sided),  
10 sec. max.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
November, 2000 – Rev. 4  
MMSF7N03HD/D  

MMSF7N03HDR2 替代型号

型号 品牌 替代类型 描述 数据表
MMSF7N03HDR2 MOTOROLA

功能相似

8.2A, 30V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, MINIATURE, 751-05, SOP-8

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