Datasheet > MMSF7P03HD

MMSF7P03HD

更新时间： 2024-09-14 22:46:07

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
10页	217K
描述
SINGLE TMOS POWER MOSFET 30 VOLTS

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MMSF7P03HD 数据手册

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SEMICONDUCTOR TECHNICAL DATA

Medium Power Surface Mount Products

Motorola Preferred Device

SINGLE TMOS

POWER MOSFET

30 VOLTS

Single HDTMOS are an advanced series of power MOSFETs

which utilize Motorola’s High Cell Density TMOS process.

HDTMOS devices are designed for use in low voltage, high speed

switching applications where power efficiency is important. Typical

applications are dc–dc converters, and power management in

portable and battery powered products such as computers,

printers, cellular and cordless phones. They can also be used for

low voltage motor controls in mass storage products such as disk

drives and tape drives.

= 35 m

DS(on)

•

Low R Provides Higher Efficiency and Extends Battery Life

DS(on)

Logic Level Gate Drive — Can Be Driven by Logic ICs

Miniature SO–8 Surface Mount Package — Saves Board Space

Diode Is Characterized for Use In Bridge Circuits

Diode Exhibits High Speed, With Soft Recovery

CASE 751–05, Style 13

SO–8

Specified at Elevated Temperature

DSS

Mounting Information for SO–8 Package Provided

Source

Gate

Drain

Top View

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain–to–Source Voltage

Symbol

Value

Unit

Vdc

DSS

Gate–to–Source Voltage — Continuous

± 20

Drain Current — Continuous @ T = 25°C

7.0

Adc

Apk

Drain Current — Single Pulse (t ≤ 10 µs)

Source Current — Continuous @ T = 25°C

2.3

2.5

Adc

Watts

°C

(1)

Total Power Dissipation @ T = 25°C

Operating and Storage Temperature Range

T , T

stg

– 55 to 150

5000

Single Pulse Drain–to–Source Avalanche Energy – STARTING T = 25°C

= 30 Vdc, V

= 5.0 Vdc, V

= 32 Vdc, I = 10 Apk, L = 10 mH, R = 25

)

Thermal Resistance — Junction–to–Ambient

Maximum Temperature for Soldering

°C/W

°C

θJA

260

DEVICE MARKING

S7P03

(1) When mounted on 1 inch square FR–4 or G–10 (V

= 10 V @ 10 seconds)

ORDERING INFORMATION

Device

Reel Size

Tape Width

Quantity

MMSF7P03HDR2

13″

12 mm embossed tape

2500 units

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

REV 2

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1997

12 3 4 5 6 7...10

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与MMSF7P03HD相关器件

型号	品牌	获取价格	描述	数据表
MMSF7P03HDR2	ONSEMI	获取价格	Power MOSFET 7 A, 30 V, P−Channel SO−8
MMSF7P03HDR2	MOTOROLA	获取价格	Power Field-Effect Transistor, 7A I(D), 30V, 0.035ohm, 1-Element, P-Channel, Silicon, Meta
MMSF7P03HDR2G	ONSEMI	获取价格	Power MOSFET 7 A, 30 V, P−Channel SO−8
MMSK22-SP	ALTECH	获取价格	Proximity Sensor,
MMSP-11-A-SG	ADAM-TECH	获取价格	Memory Stick
MMSPN050-C53	MACOM	获取价格	Microstrip PIN Diodes
MMSPN050-C54	MACOM	获取价格	Microstrip PIN Diodes
MMSS-02-20C-F-03.00-S	SAMTEC	获取价格	Board Connector
MMSS-02-20C-F-03.00-S-K-M	SAMTEC	获取价格	Board Connector
MMSS-02-20C-F-03.01-S-K	SAMTEC	获取价格	Board Connector, 2 Contact(s), 1 Row(s), Female, Crimp Terminal, Socket,

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