Datasheet > MMSPN050-C54

MMSPN050-C54

更新时间： 2024-09-16 14:54:39

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描述
Microstrip PIN Diodes

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MMSPN050-C54 数据手册

MMSPN050-C54

Microstrip PIN Diode

Rev. V1

Features



Supports up to 40 Watts Power

Low Insertion Loss 0.38 dB typical at 10 GHz

High Isolation 55 dB typical at 40 GHz

RoHS* Compliant

Description

A broadband medium power PIN diode is designed

as a 50 Ω microstrip when biased at zero or a

negative voltage. The device has extremely high

isolation from 50 MHz to 40 GHz and can achieve

switching speeds <250 ns.

Electrical Specifications: T_C= +25°C

Parameter

Test Conditions

Units

Min.

200

—

Typ.

—

Max.

—

Breakdown Voltage

Series Resistance

Minority Carrier Lifetime

I_R= 10 µA

I_F= 100 mA, 500 MHz

0.6

—

I_F= 10 mA, I_R= 6 mA, 10% / 90%

—

4000

—

V_R= -40 V, 10 GHz

V_R= -40 V, <40 GHz

0.38

1.35

0.65

—

Insertion Loss

Input Return Loss

Isolation

—

10 GHz

<40 GHz

—

I_F= 100 V, 10 GHz,

I_F= 100 V, <40 GHz

—

Absolute Maximum Ratings

Parameter

Absolute Maximum

Reverse Voltage

200 V

100 mA

65°C/W

+150°C

Forward Current

Thermal Resistance

Junction Temperature

Storage Temperature

Assembly Temperature

Ordering Information

Part Number

-65°C to +125°C

Package

+260°C,

per JEDEC STD-J-20C

MMSPN050-C54

bulk

* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0017573

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