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MMQA18VT1 PDF预览

MMQA18VT1

更新时间: 2024-09-17 22:25:15
品牌 Logo 应用领域
安森美 - ONSEMI 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
6页 70K
描述
SC-74 Quad Monolithic Common Anode

MMQA18VT1 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SC-74
包装说明:PLASTIC, CASE 318F-05, SC-74, 6 PIN针数:6
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.48
Is Samacsys:N最大击穿电压:18.9 V
最小击穿电压:17.1 V击穿电压标称值:18 V
最大钳位电压:26 V配置:COMMON ANODE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PDSO-G6JESD-609代码:e0
湿度敏感等级:1最大非重复峰值反向功率耗散:150 W
元件数量:4端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.225 W
认证状态:Not Qualified最大重复峰值反向电压:14 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Tin/Lead (Sn80Pb20)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MMQA18VT1 数据手册

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MMQA Quad Common  
Anode Series  
Preferred Devices  
SC−74 Quad Monolithic  
Common Anode  
Transient Voltage Suppressors  
for ESD Protection  
http://onsemi.com  
This quad monolithic silicon voltage suppressor is designed for  
applications requiring transient overvoltage protection capability. It is  
intended for use in voltage and ESD sensitive equipment such as  
computers, printers, business machines, communication systems,  
medical equipment, and other applications. Its quad junction common  
anode design protects four separate lines using only one package.  
These devices are ideal for situations where board space is at a  
premium.  
SC−74 QUAD TRANSIENT  
VOLTAGE SUPPRESSOR  
24 WATTS PEAK POWER  
5.6 − 33 VOLTS  
Specification Features:  
PIN ASSIGNMENT  
SC−74 Package Allows Four Separate Unidirectional Configurations  
Peak Power − Min. 24 W @ 1.0 ms (Unidirectional),  
1
2
3
6
5
4
per Figure 5 Waveform  
Peak Power − Min. 150 W @ 20 ms (Unidirectional),  
per Figure 6 Waveform  
Maximum Clamping Voltage @ Peak Pulse Current  
6
1
Low Leakage < 2.0 mA  
SC−74  
PLASTIC  
CASE 318F  
PIN 1. CATHODE  
2. ANODE  
ESD Rating of Class N (exceeding 16 kV) per the  
3. CATHODE  
4. CATHODE  
5. ANODE  
Human Body Model  
Pb−Free Packages are Available  
6. CATHODE  
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol Value  
Unit  
MARKING DIAGRAM  
Peak Power Dissipation @ 1.0 ms (Note 1)  
P
pk  
24  
W
@ T 25°C  
A
Peak Power Dissipation @ 20 ms (Note 2) @  
P
pk  
150  
W
xxx  
T
25°C  
A
Total Power Dissipation on FR-5 Board  
°P °  
D
°225  
1.8  
°mW°  
mW/°C  
(Note 3) @ T = 25°C  
A
xxx = Device Code  
Thermal Resistance from Junction−to−Ambi-  
ent  
R
556  
°C/W  
q
JA  
M
= Date Code  
Total Power Dissipation on Alumina Sub-  
°P °  
D
°300  
2.4  
°mW  
mW/°C  
strate (Note 4) @ T = 25°C  
A
ORDERING INFORMATION  
Derate above 25°C  
See detailed ordering and shipping information in the table on  
page 5 of this data sheet.  
Thermal Resistance from Junction−to−Ambi-  
ent  
R
417  
°C/W  
°C  
q
JA  
Junction and Storage Temperature Range  
T , T  
J
°− 55 to  
+150°  
stg  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking table  
on page 5 of this data sheet.  
Lead Solder Temperature − Maximum (10  
Second Duration)  
T
L
260  
°C  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
April, 2004 − Rev. 4  
MMQA/D  

MMQA18VT1 替代型号

型号 品牌 替代类型 描述 数据表
MMQA18VT1G ONSEMI

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