Datasheet > MMH3111NT1

MMH3111NT1

更新时间： 2024-09-16 03:48:59

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管场效应晶体管射频微波
页数	文件大小	规格书
16页	297K
描述
Heterostructure Field Effect Transistor

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中文翻译

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数据手册

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MMH3111NT1 数据手册

Document Number: MMH3111NT1

Rev. 0, 11/2007

Freescale Semiconductor

Technical Data

Heterostructure Field Effect

Transistor (GaAs HFET)

MMH3111NT1

Broadband High Linearity Amplifier

The MMH3111NT1 is a General Purpose Amplifier that is internally

input and output prematched. It is designed for a broad range of Class A,

small-signal, high linearity, general purpose applications. It is suitable

for applications with frequencies from 250 to 4000 MHz such as Cellular,

PCS, WLL, PHS, CATV, VHF, UHF, UMTS and general small-signal RF.

250-4000 MHz, 12 dB

22.5 dBm

Features

GaAs HFET

• Frequency: 250 to 4000 MHz

• P1dB: 22.5 dBm @ 900 MHz

• Small-Signal Gain: 12 dB @ 900 MHz

• Third Order Output Intercept Point: 44 dBm @ 900 MHz

• Single 5 Volt Supply

• Internally Prematched to 50 Ohms

• Internally Biased

CASE 1514-02, STYLE 2

SOT-89

• Low Cost SOT-89 Surface Mount Package

• RoHS Compliant

PLASTIC

• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.

Table 1. Typical Performance ⁽¹⁾

Table 2. Maximum Ratings

Characteristic

Symbol

900

MHz

2140 3500 Unit

MHz MHz

Rating

Symbol

Value

Unit

(2)

Supply Voltage

300

Small-Signal Gain

(S21)

-14

22.5

11.3

-15

-19

-16

-14

(2)

Supply Current

RF Input Power

dBm

°C

Input Return Loss

(S11)

IRL

ORL

P1db

IP3

Storage Temperature Range

stg

-65 to +150

150

(3)

Junction Temperature

°C

Output Return Loss

(S22)

2. Continuous voltage and current applied to device.

3. For reliable operation, the junction temperature should not

Power Output @1dB

Compression

dBm

exceed 150°C.

Third Order Output

Intercept Point

1. V = 5 Vdc, T = 25°C, 50 ohm system

Table 3. Thermal Characteristics (V = 5 Vdc, I = 150 mA, T = 25°C)

(4)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

37.5

°C/W

4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MMH3111NT1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...16

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与MMH3111NT1相关器件

型号	品牌	获取价格	描述	数据表
MMH3111NT1_08	FREESCALE	获取价格	Heterostructure Field Effect Transistor (GaAs HFET)
MMH4-1	AMPHENOL	获取价格	Board Connector, 4 Contact(s), 1 Row(s), Female, 0.098 inch Pitch, Black Insulator, Plug
MMH5-1	AMPHENOL	获取价格	Board Connector, 5 Contact(s), 1 Row(s), Female, 0.098 inch Pitch, Black Insulator, Plug
MMH6-1	AMPHENOL	获取价格	Board Connector, 6 Contact(s), 1 Row(s), Female, 0.098 inch Pitch, Black Insulator, Plug
MMH7-1	AMPHENOL	获取价格	Board Connector, 7 Contact(s), 1 Row(s), Female, 0.098 inch Pitch, Black Insulator, Plug
MMH8-1	AMPHENOL	获取价格	Board Connector, 8 Contact(s), 1 Row(s), Female, 0.098 inch Pitch, Black Insulator, Plug
MMH9-1	AMPHENOL	获取价格	Board Connector, 9 Contact(s), 1 Row(s), Female, 0.098 inch Pitch, Black Insulator, Plug
MMHD0100J10500000050	KEMET	获取价格	CAPACITOR, METALLIZED FILM, POLYESTER, 100V, 1uF, THROUGH HOLE MOUNT, RADIAL LEADED
MMHD0100J22500000050	KEMET	获取价格	CAPACITOR, METALLIZED FILM, POLYESTER, 100V, 2.2uF, THROUGH HOLE MOUNT, RADIAL LEADED
MMHD0100K47300000050	KEMET	获取价格	Film Capacitor, Polyester, 100V, 10% +Tol, 10% -Tol, 0.047uF, Through Hole Mount, RADIAL L

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