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MMBZ5263ELT3G PDF预览

MMBZ5263ELT3G

更新时间: 2024-09-19 05:08:27
品牌 Logo 应用领域
安森美 - ONSEMI 稳压器
页数 文件大小 规格书
6页 74K
描述
Zener Voltage Regulators 225 mW SOT−23 Surface Mount

MMBZ5263ELT3G 数据手册

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MMBZ5221ELT1 Series  
Preferred Device  
Zener Voltage Regulators  
225 mW SOT−23 Surface Mount  
This series of Zener diodes is offered in the convenient, surface  
mount plastic SOT−23 package. These devices are designed to provide  
voltage regulation with minimum space requirement. They are well  
suited for applications such as cellular phones, hand held portables,  
and high density PC boards.  
http://onsemi.com  
3
1
Features  
Cathode  
Anode  
225 mW Rating on FR−4 or FR−5 Board  
Zener Voltage Range − 2.4 V to 91 V  
MARKING  
DIAGRAM  
Package Designed for Optimal Automated Board Assembly  
Small Package Size for High Density Applications  
ESD Rating of Class 3 (>16 kV) per Human Body Model  
Peak Power − 225 W (8 x 20 ms)  
3
SOT−23  
CASE 318  
STYLE 8  
Bxx M G  
Pb−Free Packages are Available  
G
1
2
1
Mechanical Characteristics:  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V−0  
Bxx = Device Code  
xx  
M
G
= (Refer to page 2)  
= Date Code*  
= Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
ORDERING INFORMATION  
Peak Power Dissipation @ 20 ms (Note 1)  
P
225  
W
pk  
Device  
MMBZ52xxELT1  
Package  
Shipping  
@ T 25°C  
L
SOT−23 3000/Tape & Reel  
Total Power Dissipation on FR−5 Board,  
P
D
(Note 2) @ T = 25°C  
Derated above 25°C  
225  
1.8  
mW  
mW/°C  
A
MMBZ52xxELT1G SOT−23 3000/Tape & Reel  
(Pb−Free)  
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
556  
°C/W  
MMBZ52xxELT3  
SOT−23 10000/Tape & Reel  
Total Power Dissipation on Alumina  
P
D
MMBZ52xxELT3G SOT−23 10000/Tape & Reel  
(Pb−Free)  
Substrate, (Note 3) @ T = 25°C  
300  
2.4  
mW  
mW/°C  
A
Derated above 25°C  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Thermal Resistance, Junction−to−Ambient  
Junction and Storage Temperature Range  
R
417  
°C/W  
°C  
q
JA  
T , T  
J
−65 to  
+150  
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 2 of  
this data sheet.  
1. Nonrepetitive current pulse per Figure 9.  
2. FR−5 = 1.0 X 0.75 X 0.62 in.  
3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.  
Devices listed in bold, italic are ON Semiconductor  
Preferred devices. Preferred devices are recommended  
choices for future use and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
August, 2005 − Rev. 6  
MMBZ5221ELT1/D  
 

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