Datasheet > MMBTSA1162

MMBTSA1162

更新时间： 2024-01-24 19:03:28

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
1页	130K
描述
PNP Silicon Epitaxial Planar Transistor

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数据手册

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MMBTSA1162 数据手册

ST 2SB772T

PNP SILICON EPITAXIAL POWER TRANSISTOR

These devices are intended for use in audio

frequency power amplifier and low speed switching

applications

TO-126 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Symbol

-V_CBO

-V_CEO

-V_EBO

Value

Unit

Collector Emitter Voltage

Emitter Base Voltage

Collector Current - DC

Collector Current - Pulse ¹⁾

-I_C

Base Current - DC

-I_B

0.6

P_D

1.0

Total Power Dissipation @ T_C= 25 C

Total Power Dissipation @ T_A= 25 C

Operating and Storage Junction Temperature Range

T_J, T_s

- 65 to + 150

¹⁾PW=10ms, Duty Cycle ≤ 50%

Characteristics at T_a= 25 C

Parameter

Symbol

h_FE

Min.

Typ.

Max.

Unit

DC Current Gain

at -V_CE= 2 V, -I_C= 20 mA

at -V_CE= 2 V, -I_C= 1 A

100

160

200

120

200

320

400

Collector Emitter Breakdown Voltage

at -I_C= 1 mA

-V_(BR)CEO

-V_(BR)CBO

-V_(BR)EBO

-I_CBO

Collector Base Breakdown Voltage

at -I_C= 1 mA

Emitter Base Breakdown Voltage

at -I_E= 1 mA

Collector Cutoff Current

at -V_CB= 30 V

µA

Emitter Cutoff Current

at -V_EB= 3 V

-I_EBO

Collector Emitter Saturation Voltage

at -I_C= 2 A, -I_B= 200 mA

-V_CE(sat)

-V_BE(sat)

C_O

0.5

Base Emitter Saturation Voltage

at -I_C= 2 A, -I_B= 200 mA

Output Capacitance

at -V_CB= 10 V, f = 1 MHz

Current Gain Bandwidth Product

at -I_C= 100 mA, -V_CE= 5 V

f_T

MHz

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 25/05/2006

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