Datasheet > MMBTSA1365

MMBTSA1365

更新时间： 2024-09-27 05:49:23

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
2页	149K
描述
PNP Silicon Epitaxial Planar Transistor

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中文翻译

获取价格

数据手册

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MMBTSA1365 数据手册

MMBTSA1365

PNP Silicon Epitaxial Planar Transistor

for high current drive application

The transistor is subdivided into three groups E, F

and G according to its DC current gain.

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

-V_CBO

-V_CEO

-V_EBO

-I_C

700

Peak Collector Current

Power Dissipation

-I_CM

P_tot

200

Junction Temperature

Storage Temperature Range

T_j

150

T_S

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at -V_CE= 4 V, -I_C= 100 mA

h_FE

150

250

400

300

500

800

Collector Cutoff Current

at -V_CB= 25 V

Emitter Cutoff Current

at -V_EB= 2 V

Collector Base Breakdown Voltage

at -I_C= 10 µA

Collector Emitter Breakdown Voltage

at -I_C= 100 µA

Emitter Base Breakdown Voltage

at -I_E= 10 µA

Collector Saturation Voltage

at -I_C= 500 mA, -I_B= 25 mA

Transition Frequency

-I_CBO

-I_EBO

µA

-V_(BR)CBO

-V_(BR)CEO

-V_(BR)EBO

-V_CE(sat)

f_T

0.5

180

MHz

at -V_CE= 6 V, I_E= 10 mA

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 06/12/2006

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