Datasheet > MMBTSA1298W

MMBTSA1298W

更新时间： 2024-01-29 16:48:22

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
2页	136K
描述
PNP Silicon Epitaxial Planar Transistor

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MMBTSA1298W 数据手册

MMBTSA1298W

PNP Silicon Epitaxial Planar Transistor

for low frequency power amplifier and power switching

applications

The transistor is subdivided into two groups, O

and Y according to its DC current gain.

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

-V_CBO

-V_CEO

-V_EBO

-I_C

800

Base Current

-I_B

160

Total Power Dissipation

Junction Temperature

Storage Temperature Range

P_tot

200

T_j

150

T_S

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at -V_CE= 1 V, -I_C= 100 mA

h_FE

100

160

200

320

Current Gain Group

at -V_CE= 1 V, -I_C= 800 mA

Collector Cutoff Current

at -V_CB= 30 V

Emitter Cutoff Current

at -V_EB= 5 V

Collector Emitter Breakdown Voltage

at -I_C= 10 mA

Emitter Base Breakdown Voltage

at -I_E= 1 mA

Collector Saturation Voltage

at -I_C= 500 mA, -I_B= 20 mA

Base Emitter Voltage

at -V_CE= 1 V, -I_C= 10 mA

Transition Frequency

-I_CBO

-I_EBO

100

-V_(BR)CEO

-V_(BR)EBO

-V_CE(sat)

-V_BE

0.4

0.8

0.5

f_T

120

MHz

at -V_CE= 5 V, -I_C= 10 mA

Collector Output Capacitance

at -V_CB= 10 V, f = 1 MHz

C_ob

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 04/06/2007

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