MMBT549
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at -VCE = 2 V, -IC = 50 mA
at -VCE = 2 V, -IC = 500 mA
at -VCE = 2 V, -IC = 1 A
at -VCE = 2 V, -IC = 2 A
hFE
hFE
hFE
hFE
70
100
80
-
-
-
-
-
300
-
-
40
Collector Base Cutoff Current
at -VCB = 30 V
at -VCB = 30 V, Ta = 100
-ICBO
-
-
0.1
10
µA
Emitter Base Cutoff Current
at -VEB = 4 V
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 10 mA
Emitter Base Breakdown Voltage
at -IE = 100 µA
-IEBO
-
0.1
µA
V
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-
-
-
35
30
5
V
V
Collector Emitter Saturation Voltage
at -IC = 1 A, -IB = 100 mA
at -IC = 2 A, -IB = 200 mA
-VCE(sat)
-
-
0.5
0.75
V
Base Emitter Saturation Voltage
at -IC = 1 A, -IB = 100 mA
Base Emitter On Voltage
at -VCE = 2 V, -IC = 1 A
Gain Bandwidth Product
at -VCE = 5 V, -IC = 100 mA, f = 100 MHZ
-VBE(sat)
-VBE(on)
fT
-
1.25
1
V
V
-
100
-
-
MHz
pF
Output Capacitance
at -VCB = 10 V, f = 1 MHZ
Cob
25
®
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Dated: 11/04/2022 Rev:01