Datasheet > MMBT2369ALT1

MMBT2369ALT1

更新时间： 2024-01-21 13:40:27

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体开关晶体管
页数	文件大小	规格书
8页	307K
描述
Switching Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMBT2369ALT1 数据手册

Order this document

by MMBT2369LT1/D

SEMICONDUCTOR TECHNICAL DATA

COLLECTOR

NPN Silicon

*Motorola Preferred Device

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Symbol

Value

Unit

Vdc

CEO

CES

Vdc

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

CBO

EBO

Emitter–Base Voltage

4.5

200

Vdc

Collector Current — Continuous

THERMAL CHARACTERISTICS

Characteristic

mAdc

Symbol

Max

Unit

(1)

Total Device Dissipation FR–5 Board

225

= 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

(2)

Alumina Substrate,

= 25°C

Derate above 25°C

2.4

417

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

DEVICE MARKING

T , T

J stg

–55 to +150

MMBT2369LT1 = M1J; MMBT2369ALT1 = 1JA

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Typ

Max

Unit

Collector–Emitter Breakdown Voltage (3)

Vdc

(BR)CEO

(I = 10 mAdc, I = 0)

4.5

—

Collector–Emitter Breakdown Voltage

(I = 10 µAdc, V = 0)

(BR)CES

(BR)CBO

(BR)EBO

Collector–Base Breakdown Voltage

(I = 10 Adc, I = 0)

Vdc

Emitter–Base Breakdown Voltage

(I = 10 Adc, I = 0)

Vdc

Collector Cutoff Current

µAdc

CBO

= 20 Vdc, I = 0)

—

0.4

= 20 Vdc, I = 0, T = 150°C)

Collector Cutoff Current

(V = 20 Vdc, V = 0)

µAdc

CES

MMBT2369A

—

0.4

CE BE

1. FR–5 = 1.0 0.75 0.062 in.

2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

M_Mot_oo_tor_ro_ol_la_a,S_Inm_{c. 1}a₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4 5 6 7 8

中文翻译

下载PDF

与MMBT2369ALT1相关器件

型号	品牌	获取价格	描述	数据表
MMBT2369ALT1G	ONSEMI	获取价格	Switching Transistors NPN Silicon
MMBT2369ALT1G	ROCHESTER	获取价格	200mA, 15V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, C
MMBT2369ALT3	MOTOROLA	获取价格	200mA, 15V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT2369ALT3G	ONSEMI	获取价格	NPN 双极晶体管
MMBT2369AW	SWST	获取价格	小信号晶体管
MMBT2369-G	COMCHIP	获取价格	GENERAL PURPOSE TRANSISTORS
MMBT2369L	ONSEMI	获取价格	Switcing Transistors
MMBT2369L	MOTOROLA	获取价格	200mA, 15V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-07, 3 PIN
MMBT2369LT1	MOTOROLA	获取价格	Switching Transistors
MMBT2369LT1	ONSEMI	获取价格	Switcing Transistors