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MMBD4448HSDW-T1 PDF预览

MMBD4448HSDW-T1

更新时间: 2024-01-08 06:40:08
品牌 Logo 应用领域
WTE 光电二极管
页数 文件大小 规格书
4页 88K
描述
Rectifier Diode, 4 Element, 0.25A, 80V V(RRM), Silicon,

MMBD4448HSDW-T1 技术参数

生命周期:Active包装说明:R-PDSO-G6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.59配置:2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G6元件数量:4
端子数量:6最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.25 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.2 W
最大重复峰值反向电压:80 V最大反向恢复时间:0.004 µs
表面贴装:YES端子形式:GULL WING
端子位置:DUALBase Number Matches:1

MMBD4448HSDW-T1 数据手册

 浏览型号MMBD4448HSDW-T1的Datasheet PDF文件第2页浏览型号MMBD4448HSDW-T1的Datasheet PDF文件第3页浏览型号MMBD4448HSDW-T1的Datasheet PDF文件第4页 
®
MMBD4448HADW / HCDW / HSDW  
SURFACE MOUNT FAST SWITCHING DIODE ARRAY  
WON-TOP ELECTRONICS  
Features  
Quad Diode Com. Anode, Cathode and Series  
L
A
Fast Switching  
Surface Mount Package Ideally Suited for  
Automatic Insertion  
For General Purpose Switching Applications  
Plastic Material – UL Recognition Flammability  
Classification 94V-0  
B
K
C
M
E
D
SOT-363  
Min  
H
Dim  
A
Max  
0.30  
1.35  
2.30  
0.10  
Mechanical Data  
B
1.15  
Case: SOT-363, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
C
2.00  
D
0.65 Typical  
J
E
0.40  
1.80  
0.50  
2.20  
0.10  
H
Polarity: See Diagram  
Weight: 0.006 grams (approx.)  
Mounting Position: Any  
Marking: Device Code, See Page 3  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
J
K
1.0 Typical  
L
0.25  
0.10  
0.40  
0.22  
M
All Dimensions in mm  
TOP VIEW  
MMBD4448HADW  
TOP VIEW  
MMBD4448HCDW  
TOP VIEW  
MMBD4448HSDW  
Maximum Ratings @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
Unit  
Non-Repetitive Peak Reverse Voltage  
VRSM  
100  
V
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
80  
V
Repetitive Peak Forward Current  
Continuous Forward Current  
IFRM  
IO  
500  
250  
mA  
mA  
Non-Repetitive Peak Forward Surge Current  
@ t = 1.0µs  
@ t = 1.0s  
4.0  
1.0  
IFSM  
A
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
°C  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Value  
200  
Unit  
mW  
Power Dissipation (Note 1)  
Thermal Resistance, Junction to Ambient (Note 1)  
RθJA  
625  
°C/W  
Note: 1. Mounted on FR-4 PC board with minimum recommended pad layout.  
© Won-Top Electronics Co., Ltd.  
Revision: May, 2014  
www.wontop.com  
1

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