Datasheet > MMBD4448HTA

MMBD4448HTA

更新时间： 2023-12-06 20:03:33

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1313K
描述
SOT-523

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MMBD4448HTA 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-523 Plastic-Encapsulate Diodes

SWITCHING DIODE

MMBD4448HT/HTA/HTC/HTS

SOT-523

FEATURES

Fast Switching Speed

For General Purpose Switching Applications

High Conductance

MMBD4448HT

MMBD4448HTA

MMBD4448HTC

MMBD4448HTS

MARKING:A3

MARKING:A6

MARKING:A7

MARKING:AB

Soliddot = Green molding compound device, if none,the normal device.

℃

Maximum Ratings and Electrical Characteristics, Single Diode @T^a=25

Parameter

Symbol

V_RM

Limit

Unit

Non-Repetitive Peak Reverse Voltage

Peak Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

V_RRM

V_RWM

V_R

RMS Reverse Voltage

V_R(RMS)

I_FM

Forward Continuous Current

Average Rectified Output Current

500

250

I_O

I_FSM

Non-Repetitive PeakForward Surge Current @t=8.3ms

℃/W

℃

2.0

Power Dissipation

150

R_θJA

Thermal Resistance from Junction to Ambient

Operation Junction and Storage Temperature Range

833

T_J,T_STG

-55 ~+150

Electrical Ratings @T

a=25℃

Parameter

Symbol

V_R

Min

0.62

Typ

Max

Unit

Conditions

μA

Reverse breakdown voltage

I_R=2.5

0.72

0.855

1.0

V_F1

V_F2

V_F3

V_F4

I_R1

I_F=5mA

I_F=10mA

I_F=100mA

I_F=150mA

V_R=70V

Forward voltage

Reverse current

1.25

0.1

μA

I_R2

V_R=20V

3.5

Capacitance between terminals

C_T

V_R=6V,f=1MHz

I_F=I_R=10mA

Reverse recovery time

t_rr

Irr=0.1XI_R,R_L=100Ω

www.jscj-elec.com

Rev. - 2.0

12 3 4

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