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MMBD4448HT_09 PDF预览

MMBD4448HT_09

更新时间: 2022-11-22 11:02:33
品牌 Logo 应用领域
美台 - DIODES 二极管开关
页数 文件大小 规格书
3页 81K
描述
SURFACE MOUNT FAST SWITCHING DIODE

MMBD4448HT_09 数据手册

 浏览型号MMBD4448HT_09的Datasheet PDF文件第2页浏览型号MMBD4448HT_09的Datasheet PDF文件第3页 
MMBD4448HT /HTA /HTC /HTS  
SURFACE MOUNT FAST SWITCHING DIODE  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
Ultra-Small Surface Mount Package  
Fast Switching Speed  
For General Purpose Switching Applications  
High Conductance  
Lead Free/RoHS Compliant (Note 2)  
"Green" Device (Notes 3 and 4)  
Case: SOT-523  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
Polarity: See Diagrams Below  
Marking Information: See Diagrams Below & Page 2  
Ordering Information: See Page 2  
Weight: 0.002 grams (approximate)  
SOT-523  
TOP VIEW  
MMBD4448HT Marking: A3  
MMBD4448HTA Marking: A6  
MMBD4448HTC Marking: A7  
MMBD4448HTS Marking: AB  
Maximum Ratings @T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
Value  
Unit  
Non-Repetitive Peak Reverse Voltage  
100  
V
VRM  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
80  
V
RMS Reverse Voltage  
57  
V
VR(RMS)  
IFM  
Forward Continuous Current  
(Note 1)  
(Note 1)  
500  
250  
4.0  
2.0  
mA  
mA  
Average Rectified Output Current  
Non-Repetitive Peak Forward Surge Current  
IO  
@ t = 1.0μs  
@ t = 1.0s  
A
IFSM  
Thermal Characteristics  
Characteristic  
Power Dissipation  
Symbol  
PD  
Value  
150  
Unit  
mW  
(Note 1)  
(Note 1)  
Thermal Resistance Junction to Ambient  
Operating and Storage Temperature Range  
833  
°C/W  
°C  
Rθ  
JA  
-65 to +150  
TJ, TSTG  
Electrical Characteristics @T = 25°C unless otherwise specified  
A
Characteristic  
Reverse Breakdown Voltage  
Symbol  
V(BR)R  
Min  
80  
Max  
Unit  
V
Test Condition  
IR = 2.5μA  
(Note 5)  
IF = 5.0mA  
IF = 10mA  
IF = 100mA  
IF = 150mA  
0.62  
0.72  
0.855  
1.0  
Forward Voltage  
Leakage Current  
V
VF  
1.25  
VR = 70V  
nA  
μA  
μA  
nA  
100  
50  
30  
VR = 75V, TJ = 150°C  
VR = 25V, TJ = 150°C  
VR = 20V  
(Note 5)  
IR  
25  
Total Capacitance  
Reverse Recovery Time  
3.5  
4.0  
pF  
ns  
CT  
trr  
VR = 6V, f = 1.0MHz  
VR = 6V, IF = 5mA  
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
5. Short duration pulse test used to minimize self-heating effect.  
1 of 3  
www.diodes.com  
March 2009  
© Diodes Incorporated  
MMBD4448HT /HTA /HTC /HTS  
Document number: DS30263 Rev. 12 - 2  

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