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MMBD4148CC_NL PDF预览

MMBD4148CC_NL

更新时间: 2024-11-01 12:59:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管
页数 文件大小 规格书
2页 32K
描述
Rectifier Diode, 2 Element, 0.2A, 100V V(RRM), Silicon, SOT-23, 3 PIN

MMBD4148CC_NL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SOT-23, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.31其他特性:ULTRA FAST
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:2 A
元件数量:2端子数量:3
最高工作温度:150 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.35 W认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.004 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MMBD4148CC_NL 数据手册

 浏览型号MMBD4148CC_NL的Datasheet PDF文件第2页 
MMBD4148 / SE / CC / CA  
Connection Diagrams  
3
3
3
4148SE  
4148  
3
5H  
1
1
1
2
2NC  
3
3
1
2
2
4148CC  
4148CA  
1
MARKING  
5H MMBD4148CA D6  
MMBD4148  
1
2
2
MMBD4148CC D5  
MMBD4148SE D4  
SOT-23  
Small Signal Diodes  
Absolute Maximum Ratings* TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VRRM  
IF(AV)  
IFSM  
Maximum Repetitive Reverse Voltage  
100  
200  
V
Average Rectified Forward Current  
mA  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 second  
1.0  
2.0  
A
A
Pulse Width = 1.0 microsecond  
Storage Temperature Range  
-55 to +150  
C
°
Tstg  
TJ  
Operating Junction Temperature  
150  
°C  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
350  
357  
mW  
RθJA  
°C/W  
Electrical Characteristics TA = 25°C unless otherwise noted  
Test Conditions  
Min  
Symbol  
Parameter  
Max  
Units  
VR  
Breakdown Voltage  
V
V
IR = 5.0 µA  
I = 100  
75  
100  
A
µ
R
VF  
IR  
Forward Voltage  
Reverse Current  
V
IF = 10 mA  
1.0  
nA  
µA  
VR = 20 V  
25  
50  
V = 20 V, T = 150 C  
°
R
A
5.0  
VR = 75 V  
A
µ
CT  
trr  
Total Capacitance  
4.0  
pF  
VR = 0, f = 1.0 MHz  
Reverse Recovery Time  
IF = 10 mA, VR = 6.0 V,  
IRR = 1.0 mA, RL = 100 Ω  
4.0  
ns  
MMBD4148, Rev.  
C
2001 Fairchild Semiconductor Corporation  

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