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MMBD4148DW PDF预览

MMBD4148DW

更新时间: 2024-11-02 14:52:23
品牌 Logo 应用领域
先科 - SWST 开关小信号开关二极管
页数 文件大小 规格书
3页 207K
描述
小信号开关二极管

MMBD4148DW 数据手册

 浏览型号MMBD4148DW的Datasheet PDF文件第2页浏览型号MMBD4148DW的Datasheet PDF文件第3页 
MMBD4148DW  
Silicon Epitaxial Planar Switching Diode  
4
5
6
Features  
• Fast switching speed  
• Ultra-small surface mount package  
• For general purpose switching applications  
• High conductance  
1
3
2
1.Anode  
2. Anode  
3.Anode  
4. Cathode 5. Cathode 6.Cathode  
SOT-363 Plastic package  
Marking Code : KA  
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
VRM  
Value  
100  
75  
Unit  
V
Peak Reverse Voltage  
Reverse Voltage  
VR  
V
Average Rectified Forward Current  
IF(AV)  
IFM  
200  
300  
mA  
mA  
Forward Continuous Current  
Non-Repetitive Peak Forward Current  
2
1
t = 1 µs  
t = 1 s  
IFSM  
A
Power Dissipation  
Ptot  
RθJA  
200  
625  
mW  
/W  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
Tj, Tstg  
- 65 to + 150  
Characteristics at Ta = 25℃  
Parameter  
Symbol  
V(BR)R  
Min.  
Max.  
Unit  
Reverse Breakdown Voltage  
75  
-
V
at IR = 100 μA  
Forward Voltage  
at IF = 1 mA  
at IF = 10 mA  
at IF = 50 mA  
at IF = 150 mA  
-
-
-
-
0.715  
0.855  
1
VF  
V
1.25  
Peak Reverse Current  
at VR = 20 V  
at VR = 75 V  
at VR = 25 V, Tj = 150℃  
at VR = 75 V, Tj = 150℃  
-
-
-
-
25  
1
30  
50  
nA  
μA  
μA  
μA  
IR  
Total Capacitance  
at VR = 0 V, f = 1 MHz  
Reverse Recovery Time  
at IF = 10 mA, Irr = 0.1 X IR, RL = 100 , VR = 6 V  
CT  
trr  
-
-
2
4
pF  
ns  
1 / 3  
®
Dated: 10/03/2021 Rev: 02  

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