Datasheet > MMBD4148DW

MMBD4148DW

更新时间： 2024-06-27 12:13:41

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
5页	283K
描述
Reverse Voltage Vr : 75 V;Forward Current Io : 200 mA;Max Surge Current : 2.0 A;Forward Voltage Vf : 1.25 V;Reverse Current Ir : 1 uA;Recovery Time : 4 ns;Package / Case : SOT-363;Mounting Style : SMT/SMD;Notes : IFSM@t = 1.0us

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MMBD4148DW 数据手册

MMBD4148DW

Silicon Epitaxial Planar Switching Diode

Features

• Fast switching speed

• Ultra-small surface mount package

• For general purpose switching applications

• High conductance

1.Anode

2. Anode

3.Anode

4. Cathode 5. Cathode 6.Cathode

Simplified outline(SOT-363)

Marking:KA2

Absolute Maximum Ratings (T_a= 25ഒ)

Parameter

Symbol

Value

100

Unit

Peak Reverse Voltage

V_RM

V_R

Reverse Voltage

Average Rectified Forward Current

I_F(AV)

I_FM

200

300

Forward Continuous Current

Non-Repetitive Peak Forward Current

t = 1 μs

t = 1 s

I_FSM

Power Dissipation

P_tot

R_ꢀJA

200

ഒ/W

ഒ

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

625

T_j, T_stg

- 65 to + 150

Characteristics at T_a= 25ഒ

Parameter

Symbol

V_(BR)R

Min.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 100 ꢀA

Forward Voltage

at I_F= 1 mA

at I_F= 10 mA

at I_F= 50 mA

at I_F= 150 mA

0.715

0.855

V_F

1.25

Peak Reverse Current

at V_R= 20 V

ꢀA

at V_R= 75 V

I_R

at V_R= 25 V, T_j= 150ഒ

at V_R= 75 V, T_j= 150ഒ

Total Capacitance

at V_R= 0 V, f = 1 MHz

C_T

t_rr

Reverse Recovery Time

at I_F= I_R= 10 mA, I_rr= 0.1 X I_R, R_L= 100 ꢁ

2018-10/08

REV:A

12 3 4 5

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