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ML920J22S-06 PDF预览

ML920J22S-06

更新时间: 2024-11-19 04:02:31
品牌 Logo 应用领域
三菱 - MITSUBISHI 半导体光电二极管激光二极管
页数 文件大小 规格书
3页 167K
描述
InGaAsP DFB LASER DIODES

ML920J22S-06 技术参数

生命周期:Obsolete包装说明:HERMETIC SEALED, TO-CAN PACKAGE-4
Reach Compliance Code:unknown风险等级:5.57
Is Samacsys:N配置:SINGLE WITH BUILT-IN PHOTO DIODE
最大正向电流:0.08 A最大正向电压:1.5 V
安装特点:THROUGH HOLE MOUNT功能数量:1
最高工作温度:85 °C最低工作温度:
光电设备类型:LASER DIODE标称输出功率:10 mW
峰值波长:1610 nm最长响应时间:2e-10 s
半导体材料:InGaAsP形状:ROUND
尺寸:2 mm子类别:Laser Diodes
表面贴装:NO最大阈值电流:15 mA
Base Number Matches:1

ML920J22S-06 数据手册

 浏览型号ML920J22S-06的Datasheet PDF文件第2页浏览型号ML920J22S-06的Datasheet PDF文件第3页 
MITSUBISHI LASER DIODES  
ML9XX11,ML9XX16,ML9XX22 SERIES  
Notice : Some parametric limits are subject to change  
InGaAsP DFB LASER DIODES  
ML925B11F / ML925B16F / ML925B22F  
TYPE  
NAME  
ML920J11S / ML920J16S / ML920J22S  
ML925J11F / ML925J16F / ML925J22F  
ML920L11S / ML920L16S / ML920L22S  
DESCRIPTION  
APPLICATION  
ML9XX11, ML9XX16 and ML9XX22 series are DFB  
(Distributed Feedback) laser diodes emitting light  
beam with emission wavelength of 1470 ~ 1610 nm.  
They are well suited for light source in long  
distance digital transmission application of coarse  
WDM.  
·~1.25Gbps digital transmission system  
· Coarse WDM application  
FEATURES  
· Homogeneous grating (AR/HR facet coating) structure  
DFB  
· Wide temperature range operation ( 0 to 85ºC )  
· Low threshold current (typical 8mA)  
· High speed response (typical 0.1nsec)  
· 8 wavelength with 20nm space at 1470 ~ 1610nm  
· φ5.6mm TO-CAN package  
They are hermetically sealed devices with the photo  
diode for optical output monitoring.  
· Flat window cap, or Aspherical lens cap  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Light output power  
Conditions  
Ratings  
Unit  
mW  
mA  
V
Po  
CW  
---  
10  
150  
2
If  
Forward current (Laser diode)  
Reverse voltage (Laser diode)  
Reverse voltage (Photo diode)  
Forward current (Photo diode)  
VRL  
VRD  
IFD  
---  
---  
20  
2
V
---  
mA  
Tc  
Tstg  
Case temperature  
Storage temperature  
---  
---  
0 to +85  
-40 to +100  
ºC  
ºC  
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified)  
[ Flat window cap ; ML925B11F/ML925B16F/ML925B22F/ ML920J11S/ML920J16S/ML920J22S ]  
Symbol  
Parameter  
Test conditions  
Min.  
Typ.  
Max.  
Unit  
Ith  
Threshold current  
CW  
---  
8
15  
mA  
---  
30  
50  
CW, Tc=85ºC  
Iop  
Operation current  
CW, Po=5mW  
---  
25  
40  
mA  
---  
60  
80  
CW, Po=5mW, Tc=85ºC  
Vop  
η
λp  
θ //  
Operating voltage  
Slope efficiency  
Peak wavelength  
CW, Po=5mW  
---  
1.1  
0.28  
<**>  
25  
1.5  
---  
V
mW/mA  
nm  
CW, Po=5mW  
0.20  
CW, Po=5mW  
Beam divergence angle (parallel) CW, Po=5mW  
---  
---  
35  
45  
deg.  
Beam divergence angle  
CW, Po=5mW  
35  
deg.  
θ ┴  
(perpendicular)  
CW, Po=5mW  
SMSR  
Side mode suppression ratio  
35  
40  
---  
dB  
Tc= 0 to +85ºC  
tr,tf  
Im  
Id  
Rise and Fall time  
Ib=Ith, 20-80% <*>  
CW, Po=5mW  
---  
0.05  
---  
0.1  
0.2  
---  
0.2  
---  
0.1  
20  
ns  
mA  
µA  
pF  
Monitoring output current (PD)  
Dark current (PD)  
V
RD=5V  
VRD=5V  
Ct  
Capacitance (PD)  
---  
10  
<*> Except influence of the 18mm lead.  
MITSUBISHI  
ELECTRIC  
Dec. 2004  

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