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MKZ8V2 PDF预览

MKZ8V2

更新时间: 2024-09-16 14:57:23
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
16页 2376K
描述
8.2 V Zener Diode, SOT23

MKZ8V2 数据手册

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MKZ Series  
TOSHIBA Zener Diode Silicon Epitaxial Planar Type  
MKZ Series  
Applications  
Voltage surge protection  
Features  
Small package  
The typical voltage of V is accorded to E24 series  
Z
Packaging and Internal Circuit  
1: Anode  
2: N.C.  
3: Cathode  
SOT23  
Absolute Maximum Ratings 1 (Note) (Unless otherwise specified, Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
*1  
Power dissipation  
P
P
320  
1000  
mW  
mW  
°C  
D
D
*2  
Junction temperature  
Storage temperature  
T
150  
j
T
55 to 150  
°C  
stg  
Absolute Maximum Ratings 2 (Note) (Unless otherwise specified, Ta = 25°C)  
*3  
*3  
Electrostatic discharge voltage  
Electrostatic discharge voltage  
Type No.  
Peak pulse  
Peak pulse  
Type No.  
Peak pulse  
Peak pulse  
*4  
*4  
*4  
*4  
Contact  
Air  
power  
current  
Contact  
Air  
power  
current  
V
(kV)  
P
(W)  
I
(A)  
V
(kV)  
P
(W)  
I
(A)  
PP  
ESD  
PK  
PP  
ESD  
PK  
MKZ5V6  
MKZ6V2  
MKZ6V8  
MKZ8V2  
MKZ12V  
± 30  
155  
175  
180  
200  
200  
12  
MKZ16V  
MKZ20V  
MKZ24V  
MKZ30V  
MKZ36V  
± 30  
200  
200  
200  
200  
200  
5.5  
± 30  
± 30  
± 30  
± 30  
11  
10  
8.5  
7
± 30  
± 30  
± 20  
± 12  
5
4.5  
4
3
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change  
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept  
and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.).  
2
*1:  
*2:  
*3:  
*4:  
Mounted on a glass epoxy circuit board of 25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.42 mm × 3  
2
Mounted on a glass epoxy circuit board of 25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm  
According to IEC61000-4-2  
According to IEC61000-4-5, tp = 8 / 20 μs  
Start of commercial production  
2022-02  
© 2021 Toshiba Electronic Devices & Storage Corporation  
2021-12-16  
1

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