Datasheet > MJE2360TAS

MJE2360TAS

更新时间： 2024-11-03 10:14:31

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
59页	340K
描述
0.5A, 350V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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MJE2360TAS 数据手册

SEMICONDUCTOR TECHNICAL DATA

0.5 AMPERE

POWER TRANSISTORS

NPN SILICON

. . . useful for general–purpose, high voltage applications requiring high f .

•

Collector–Emitter Sustaining Voltage —

= 350 Vdc (Min) @ I = 2.5 mAdc

350 VOLTS

30 WATTS

CEO(sus)

DC Current Gain —

= 40 (Min) @ I = 100 mAdc — MJE2361T

Current–Gain–Bandwidth Product —

= 10 MHz (Typ) @ I = 50 mAdc

MAXIMUM RATINGS

Rating

Symbol

Value

350

375

6.0

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Base Current

CEO

CASE 221A–06

TO–220AB

0.5

0.25

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.24

Watts

W/ C

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

4.167

C/W

5.0

100

120

140

160

T , CASE TEMPERATURE (°C)

Figure 1. Power–Temperature Derating Curve

REV 1

3–626

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...59

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MJE2360TBC	ONSEMI	获取价格	TRANSISTOR 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General
MJE2360TBG	ONSEMI	获取价格	0.5A, 350V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE2360TC	MOTOROLA	获取价格	0.5A, 350V, NPN, Si, POWER TRANSISTOR, TO-220AB
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MJE2360TL	MOTOROLA	获取价格	0.5A, 350V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE2360TN	MOTOROLA	获取价格	0.5A, 350V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE2360TS	MOTOROLA	获取价格	0.5A, 350V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE2360TT	MOTOROLA	获取价格	0.5A, 350V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE2360TU	MOTOROLA	获取价格	Power Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
MJE2360TU2	MOTOROLA	获取价格	Power Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla