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MJB42CT4G

更新时间： 2024-01-07 16:30:42
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 85K
描述
Complementary Silicon Plastic Power Transistors

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中文翻译

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MJB42CT4G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：LEAD FREE, PLASTIC, CASE 418B-04, D2PAK-3/2针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.29.00.95Factory Lead Time：5 weeks
风险等级：0.67外壳连接：COLLECTOR
最大集电极电流 (IC)：6 A集电极-发射极最大电压：100 V
配置：SINGLE最小直流电流增益 (hFE)：15
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：PNP最大功率耗散 (Abs)：65 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：3 MHz
Base Number Matches：1

MJB42CT4G 数据手册

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MJB41C (NPN),  
MJB42C (PNP)  
Preferred Devices  
Complementary Silicon  
Plastic Power Transistors  
D2PAK for Surface Mount  
http://onsemi.com  
Features  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
6 AMPERES,  
• Lead Formed for Surface Mount Applications in Plastic Sleeves  
(No Suffix)  
• Electrically the Same as TIP41 and T1P42 Series  
• Pb−Free Packages are Available  
100 VOLTS, 65 WATTS  
MARKING  
DIAGRAM  
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Value  
100  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
2
D PAK  
V
100  
CB  
EB  
J4xCG  
AYWW  
CASE 418B  
STYLE 1  
V
5.0  
Collector Current − Continuous  
− Peak  
I
6.0  
10  
C
Base Current  
I
2.0  
Adc  
B
J4xC = Specific Device Code  
x = 1 or 2  
Total Power Dissipation  
P
D
@ T = 25_C  
C
65  
0.52  
W
W/_C  
A
Y
= Assembly Location  
= Year  
Derate above 25_C  
WW = Work Week  
= Pb−Free Package  
Total Power Dissipation  
P
D
G
@ T = 25_C  
A
2.0  
0.016  
W
Derate above 25_C  
W/_C  
mJ  
ORDERING INFORMATION  
Unclamped Inductive Load Energy (Note 1)  
E
62.5  
†
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to +150  
_C  
J
stg  
Device  
MJB41C  
MJB41CG  
Package  
Shipping  
2
D PAK  
50 Units/Rail  
50 Units/Rail  
THERMAL CHARACTERISTICS  
Characteristic  
2
D PAK  
Symbol  
Max  
1.92  
62.5  
Unit  
_C/W  
_C/W  
(Pb−Free)  
Thermal Resistance, Junction−to−Case  
R
q
JC  
2
MJB41CT4  
D PAK  
800/Tape & Reel  
800/Tape & Reel  
Thermal Resistance,  
Junction−to−Ambient  
R
q
JA  
JA  
L
2
MJB41CT4G  
D PAK  
(Pb−Free)  
Thermal Resistance,  
R
q
50  
_C/W  
_C  
2
MJB42C  
D PAK  
50 Units/Rail  
50 Units/Rail  
Junction−to−Ambient (Note 2)  
2
MJB42CG  
D PAK  
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from Case for 10 Seconds  
T
260  
(Pb−Free)  
2
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MJB42CT4  
D PAK  
800/Tape & Reel  
800/Tape & Reel  
2
MJB42CT4G  
D PAK  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
1. I = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, V = 10 V, R = 100 W  
C
CC  
BE  
2. When surface mounted to an FR−4 board using the minimum recommended  
pad size.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 1  
MJB41C/D  
 
123456

中文翻译

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MJB42CT4G 替代型号

型号 品牌 替代类型 描述 数据表
NJVMJB42CT4G ONSEMI

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MJB42CG ONSEMI

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BCP53-10T1G ONSEMI

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