Datasheet > MGY20N120D

MGY20N120D

更新时间： 2024-09-16 22:30:11

品牌	Logo	应用领域
安森美 - ONSEMI		晶体二极管晶体管栅
页数	文件大小	规格书
6页	175K
描述
Insulated Gate Bipolar Transistor with Anti-Parallel Diode

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SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

N–Channel Enhancement–Mode Silicon Gate

IGBT & DIODE IN TO–264

20 A @ 90°C

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged

with a soft recovery ultra–fast rectifier and uses an advanced

termination scheme to provide an enhanced and reliable high

voltage blocking capability. Short circuit rated IGBT’s are specifical-

ly suited for applications requiring a guaranteed short circuit

withstand time such as Motor Control Drives. Fast switching

characteristics result in efficient operation at high frequencies.

Co–packaged IGBT’s save space, reduce assembly time and cost.

28 A @ 25°C

1200 VOLTS

SHORT CIRCUIT RATED

•

Industry Standard High Power TO–264 Package (TO–3PBL)

High Speed E : 160 J per Amp typical at 125°C

off

High Short Circuit Capability – 10 s minimum

Soft Recovery Free Wheeling Diode is included in the package

Robust High Voltage Termination

Robust RBSOA

CASE 340G–02

STYLE 5

TO–264

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

1200

±20

Unit

Vdc

Adc

Collector–Emitter Voltage

CES

Collector–Gate Voltage (R

= 1.0 MΩ)

CGR

Gate–Emitter Voltage — Continuous

Collector Current — Continuous @ T = 25°C

C25

C90

— Continuous @ T = 90°C

— Repetitive Pulsed Current (1)

Apk

Total Power Dissipation @ T = 25°C

Derate above 25°C

174

1.39

Watts

W/°C

Operating and Storage Junction Temperature Range

Short Circuit Withstand Time

T , T

stg

–55 to 150

°C

= 720 Vdc, V

= 15 Vdc, T = 125°C, R = 20 Ω)

GE J G

Thermal Resistance — Junction to Case – IGBT

— Junction to Case – Diode

0.7

1.1

°C/W

°C

θJC

θJA

— Junction to Ambient

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds

Mounting Torque, 6–32 or M3 screw

260

10 lbf in (1.13 N m)

(1) Pulse width is limited by maximum junction temperature. Repetitive rating.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s is a trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola IGBT Device Data

Motorola, Inc. 1997

12 3 4 5 6

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与MGY20N120D相关器件

型号	品牌	获取价格	描述	数据表
MGY25N120	ONSEMI	获取价格	Insulated Gate Bipolar Transistor
MGY25N120	MOTOROLA	获取价格	Insulated Gate Bipolar Transistor
MGY25N120D	MOTOROLA	获取价格	Insulated Gate Bipolar Transistor with Anti-Parallel Diode
MGY30N60D	MOTOROLA	获取价格	Insulated Gate Bipolar Transistor with Anti-Parallel Diode
MGY40N60	MOTOROLA	获取价格	Insulated Gate Bipolar Transistor
MGY40N60D	MOTOROLA	获取价格	Insulated Gate Bipolar Transistor with Anti-Parallel Diode
MGZ2310T	MICRO-ELECTRONICS	获取价格	Single Color LED, Green, Transparent Clear, 5mm,
MGZ2310T-2	MICRO-ELECTRONICS	获取价格	Single Color LED, Green, Transparent Clear, 5mm,
MGZ2310T-3	MICRO-ELECTRONICS	获取价格	Single Color LED, Green, Transparent Clear, 5mm,
MGZ2310TA-3	MICRO-ELECTRONICS	获取价格	ULTRA HIGH BRIGHTNESS OVAL-SHAPED GREEN LED LAMP

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