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MGY25N120D PDF预览

MGY25N120D

更新时间： 2024-09-16 22:30:11
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体二极管晶体管栅
页数 文件大小 规格书
6页 259K
描述
Insulated Gate Bipolar Transistor with Anti-Parallel Diode

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中文翻译

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MGY25N120D 技术参数

生命周期：Transferred零件包装代码：TO-264AA
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknown风险等级：5.2
其他特性：HIGH SPEED SWITCHING, ULTRA FAST SOFT RECOVERY最大集电极电流 (IC)：38 A
集电极-发射极最大电压：1200 V配置：SINGLE WITH BUILT-IN DIODE
JEDEC-95代码：TO-264AAJESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：MOTOR CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：876 ns标称接通时间 (ton)：214 ns
Base Number Matches：1

MGY25N120D 数据手册

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Order this document  
by MGY25N120D/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
N–Channel Enhancement–Mode Silicon Gate  
IGBT & DIODE IN TO–264  
25 A @ 90°C  
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged  
with a soft recovery ultra–fast rectifier and uses an advanced  
termination scheme to provide an enhanced and reliable high  
voltage–blocking capability. Short circuit rated IGBT’s are specifi-  
cally suited for applications requiring a guaranteed short circuit  
withstand time such as Motor Control Drives. Fast switching  
characteristics result in efficient operation at high frequencies.  
Co–packaged IGBT’s save space, reduce assembly time and cost.  
38 A @ 25°C  
1200 VOLTS  
SHORT CIRCUIT RATED  
C
E
•
•
•
•
•
•
Industry Standard High Power TO–264 Package (TO–3PBL)  
High Speed E : 226 J per Amp typical at 125°C  
off  
High Short Circuit Capability – 10 s minimum  
Soft Recovery Free Wheeling Diode is included in the package  
Robust High Voltage Termination  
G
Robust RBSOA  
G
C
E
CASE 340G–02, Style 5  
TO–264  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
1200  
1200  
±20  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
V
CES  
Collector–Gate Voltage (R  
GE  
= 1.0 MΩ)  
V
CGR  
Gate–Emitter Voltage — Continuous  
V
GE  
Collector Current — Continuous @ T = 25°C  
I
I
I
38  
25  
76  
C
C
C25  
C90  
CM  
—
—
Continuous @ T = 90°C  
Repetitive Pulsed Current (1)  
Apk  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
212  
1.69  
Watts  
W/°C  
C
Operating and Storage Junction Temperature Range  
Short Circuit Withstand Time  
T , T  
stg  
–55 to 150  
10  
°C  
J
t
sc  
s
(V  
CC  
= 720 Vdc, V = 15 Vdc, T = 125°C, R = 20 Ω)  
GE J G  
Thermal Resistance — Junction to Case – IGBT  
— Junction to Case – Diode  
R
R
R
0.6  
0.9  
35  
°C/W  
°C  
θJC  
θJC  
θJA  
— Junction to Ambient  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds  
Mounting Torque, 6–32 or M3 screw  
T
260  
L
10 lbf in (1.13 N m)  
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1996  
123456

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