5秒后页面跳转
MGS-71008 PDF预览

MGS-71008

更新时间: 2024-11-20 22:30:11
品牌 Logo 应用领域
安捷伦 - AGILENT 射频和微波开关射频开关微波开关光电二极管
页数 文件大小 规格书
5页 54K
描述
Absorptive SPDT GaAs MMIC Switch

MGS-71008 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SOP8,.25Reach Compliance Code:unknown
风险等级:5.9Is Samacsys:N
1dB压缩点:16 dBm最大插入损耗:1.9 dB
最小隔离度:16 dBJESD-609代码:e0
安装特点:SURFACE MOUNT功能数量:1
端子数量:8准时:0.003 µs
最大工作频率:3000 MHz封装主体材料:PLASTIC/EPOXY
封装等效代码:SOP8,.25端口终止:ABSORPTIVE
电源:-5 V射频/微波设备类型:SPDT
子类别:RF/Microwave Switches表面贴装:YES
技术:GAAS端子面层:Tin/Lead (Sn/Pb)
最大电压驻波比:1.4Base Number Matches:1

MGS-71008 数据手册

 浏览型号MGS-71008的Datasheet PDF文件第2页浏览型号MGS-71008的Datasheet PDF文件第3页浏览型号MGS-71008的Datasheet PDF文件第4页浏览型号MGS-71008的Datasheet PDF文件第5页 
Absorptive SPDT GaAs MMIC  
Switch  
Technical Data  
MGS-71008  
surface-mount SO-8 package.  
Features  
SO-8 Package  
Switching is actuated by a -5 V  
control voltage per the truth table  
shown on the next page. -3.3 V  
operation is also possible with  
• Single-Pole, Double-Throw  
Output  
• BroadBandwidth:  
DCto3 GHz  
some reduction in P1 dB and IP .  
3
• High Isolation:  
37 dB Typicalat1 GHz  
The MGS-71008 is designed for  
high volume commercial applica-  
tions where low insertion loss,  
high isolation, and fast switching  
speed are required. Its low cost  
and high performance make it  
suitable for a wide variety of uses  
such as digital cellular, spread  
spectrum, GPS, and other RF  
switching applications. Refer to  
applications note AN-G007 for  
more application details.  
• Fast Switching Time:  
AC Equivalent  
Circuit/Pinout  
3 ns Typical  
• Ultra Low DC Power  
Consumption  
J1  
Ground  
J2  
Ground  
Ground  
J3  
• Small Surface-Mount Plastic  
Package  
Control 1  
Control 2  
Description  
TheMGS-71008isasingle-pole,  
double-throw monolithic GaAs  
MMIC switch. The J2 and J3 of the  
MGS-71008areterminatedto  
ground by internal 50 load  
resistors when “off” (a reflective  
version, theMGS-70008, which  
terminates the “off” port to  
ground, is also available). The  
switch is sealed in a small, plastic,  
The die is fabricated using HP’s  
nominal0.3 micronrecessed  
Schottky-barrier-gate, gold  
metallization, and silicon nitride  
passivation to achieve excellent  
performance, uniformity, and  
reliability.  
7-161  
5965-9118E  

与MGS-71008相关器件

型号 品牌 获取价格 描述 数据表
MGS-71018 AGILENT

获取价格

SPDT, 4600MHz Max, 1 Func, 2.4dB Insertion Loss-Max, GAAS
MGS801 TE

获取价格

GaAs Schottky Diodes
MGS801 MACOM

获取价格

GaAs Schottky Diodes
MGS801A TE

获取价格

GaAs Schottky Diodes
MGS801A MACOM

获取价格

GaAs Schottky Diodes
MGS802 TE

获取价格

GaAs Schottky Diodes
MGS802 MACOM

获取价格

GaAs Schottky Diodes
MGS802A TE

获取价格

GaAs Schottky Diodes
MGS802A MACOM

获取价格

GaAs Schottky Diodes
MGS803 TE

获取价格

GaAs Schottky Diodes