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MGS906 PDF预览

MGS906

更新时间: 2024-11-22 14:52:15
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页数 文件大小 规格书
4页 705K
描述
GaAs Schottky Diodes

MGS906 技术参数

生命周期:Active包装说明:R-XTMW-F3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.60风险等级:5.3
配置:COMPLEX最大二极管电容:0.04 pF
二极管元件材料:GALLIUM ARSENIDE二极管类型:MIXER DIODE
频带:MILLIMETER WAVE BANDJESD-30 代码:R-XTMW-F3
元件数量:4端子数量:3
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:MICROWAVE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.075 W认证状态:Not Qualified
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:TRIPLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MGS906 数据手册

 浏览型号MGS906的Datasheet PDF文件第2页浏览型号MGS906的Datasheet PDF文件第3页浏览型号MGS906的Datasheet PDF文件第4页 
MGS8xx / MGS9xx Series  
GaAs Schottky Diodes  
Rev. V1  
Features  
14 Different Configurations  
Beam Lead, Flip Chip, or Packaged Devices  
Hi-Rel Screening per MIL-PRF-19500 and MIL-  
PRF-38534 Available  
Description  
The MGS series of GaAs Schottky diodes are  
designed for optimum performance in millimeter  
wave components operating to 60 GHz.  
Beam Lead  
Electrical Characteristics, TA = +25°C  
VF  
mV  
Δ VF  
mV  
VBR  
V
CJ  
pF  
Δ CJ  
pF  
RS  
Model  
Configuration  
Outline  
Min.  
Max.  
Max.  
Min.  
Max.  
Max.  
Max.  
MGS901  
MGS902  
MGS903  
MGS904  
MGS905  
MGS906  
MGS907  
Single Junction  
650  
650  
750  
750  
20  
20  
20  
20  
40  
40  
40  
40  
40  
60  
60  
60  
5
0.06  
0.10  
0.06  
0.06  
0.06  
0.04  
0.04  
0.06  
0.08  
0.04  
0.10  
0.10  
0.10  
0.03  
7
GB110  
GB210  
GB310  
B85  
Anti-parallel Pair  
5
7
Series Tee  
650  
750  
5
0.02  
0.02  
0.02  
0.02  
0.02  
0.02  
0.02  
0.02  
0.03  
0.03  
0.03  
7
4 Junction Ring-Quad  
4 Junction Bridge-Quad  
4 Junction Series-Tee  
8 Junction Ring-Quad  
650  
750  
5
7
650  
750  
5
7
B86  
1300  
1300  
1300  
1300  
1300  
1800  
1800  
1800  
2500  
1500  
1500  
1500  
1500  
1500  
2100  
2100  
2100  
2900  
IF = 1 mA  
10  
10  
10  
10  
10  
15  
15  
15  
20  
14  
14  
12  
10  
14  
21  
21  
21  
28  
B91  
B85  
MGS907A 8 Junction Ring-Quad  
MGS907B 8 Junction Ring-Quad  
B85  
B85  
MGS908  
MGS909  
MGS910  
MGS911  
MGS912  
8 Junction Quad  
6 Junction Series-Tee  
12 Junction Ring-Quad  
12 Junction Bridge-Quad  
Four Junction  
B86  
B90  
B87  
B88  
B89  
Test Conditions  
IR = 10 µA VR = 0 V, 1 MHz IF = 5 mA  
Flip Chip  
Electrical Characteristics, TA = +25°C  
VF  
mV  
Δ VF  
mV  
VBR  
V
CJ  
pF  
Δ CJ  
pF  
RS  
Model  
Configuration  
Outline  
Min.  
Max.  
Max.  
Min.  
Max.  
Max.  
Max.  
MGS801  
Single Junction  
650  
650  
650  
650  
650  
750  
750  
750  
750  
750  
20  
20  
20  
5
5
5
5
5
0.05  
0.075  
0.10  
0.15  
0.06  
7
5
7
5
7
GC110  
GC110  
GC210  
GC210  
GC310  
MGS801A Single Junction  
MGS802 Anti-parallel Pair  
MGS802A Anti-parallel Pair  
MGS803  
Series Tee  
0.02  
Test Conditions  
IF = 1 mA  
IR = 10 µA VR = 0 V, 1 MHz IF = 5 mA  
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
For further information and support please visit:  
https://www.macom.com/support  

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