Datasheet > MGS801

MGS801

更新时间： 2023-12-06 20:01:13

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描述
GaAs Schottky Diodes

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MGS801 数据手册

MGS8xx / MGS9xx Series

GaAs Schottky Diodes

Rev. V1

Features



14 Different Configurations

Beam Lead, Flip Chip, or Packaged Devices

Hi-Rel Screening per MIL-PRF-19500 and MIL-

PRF-38534 Available

Description

The MGS series of GaAs Schottky diodes are

designed for optimum performance in millimeter

wave components operating to 60 GHz.

Beam Lead

Electrical Characteristics, T_A= +25°C

V_F

Δ V_F

V_BR

C_J

Δ C_J

R_S

Model

Configuration

Outline

Min.

Max.

Min.

Max.

MGS901

MGS902

MGS903

MGS904

MGS905

MGS906

MGS907

Single Junction

650

750

—

0.06

0.10

0.06

0.04

0.06

0.08

0.04

0.10

0.03

—

GB110

GB210

GB310

B85

Anti-parallel Pair

—

Series Tee

650

750

0.02

0.03

—

4 Junction Ring-Quad

4 Junction Bridge-Quad

4 Junction Series-Tee

8 Junction Ring-Quad

650

750

650

750

B86

1300

1800

2500

1500

2100

2900

I_F= 1 mA

B91

B85

MGS907A 8 Junction Ring-Quad

MGS907B 8 Junction Ring-Quad

B85

MGS908

MGS909

MGS910

MGS911

MGS912

8 Junction Quad

6 Junction Series-Tee

12 Junction Ring-Quad

12 Junction Bridge-Quad

Four Junction

B86

B90

B87

B88

B89

Test Conditions

I_R= 10 µA V_R= 0 V, 1 MHz I_F= 5 mA

Flip Chip

Electrical Characteristics, T_A= +25°C

V_F

Δ V_F

V_BR

C_J

Δ C_J

R_S

Model

Configuration

Outline

Min.

Max.

Min.

Max.

MGS801

Single Junction

650

750

—

0.05

0.075

0.10

0.15

0.06

—

GC110

GC210

GC310

MGS801A Single Junction

MGS802 Anti-parallel Pair

MGS802A Anti-parallel Pair

—

MGS803

Series Tee

0.02

Test Conditions

I_F= 1 mA

I_R= 10 µA V_R= 0 V, 1 MHz I_F= 5 mA

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

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