型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MDS50G-16 | DGNJDZ |
获取价格 |
Glass Passivated Three Phase Rectifier Bridge | |
MDS50G-18 | DGNJDZ |
获取价格 |
Glass Passivated Three Phase Rectifier Bridge | |
MDS50J | DGNJDZ |
获取价格 |
Glass Passivated Three Phase Rectifier Bridge | |
MDS50J-12 | DGNJDZ |
获取价格 |
Glass Passivated Three Phase Rectifier Bridge | |
MDS50J-16 | DGNJDZ |
获取价格 |
Glass Passivated Three Phase Rectifier Bridge | |
MDS50J-18 | DGNJDZ |
获取价格 |
Glass Passivated Three Phase Rectifier Bridge | |
MDS550L | ADPOW |
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RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 55ST-1, 2 PIN | |
MDS550L | MICROSEMI |
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Transistor | |
MDS5601 | MGCHIP |
获取价格 |
Dual N-channel Trench MOSFET 30V, 12.9A, 10.5m(ohm) | |
MDS5601URH | MGCHIP |
获取价格 |
Dual N-channel Trench MOSFET 30V, 12.9A, 10.5m(ohm) |