Datasheet > MDS5601

MDS5601

更新时间： 2024-10-15 01:17:11

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	678K
描述
Dual N-channel Trench MOSFET 30V, 12.9A, 10.5m(ohm)

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MDS5601 数据手册

MDS5601

Dual N-channel Trench MOSFET 30V, 12.9A, 10.5mΩ

General Description

Features

The MDS5601 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDS5601 is suitable for DC/DC converter and

general purpose applications.

V_DS= 30V

I_D= 12.9A @V_GS= 10V

R_DS(ON)

< 10.5mΩ @V_GS= 10V

< 16.1mΩ @V_GS= 4.5V

100% UIL Tested

100% Rg Tested

5(D₂)

6(D₂)

7(D₁)

8(D₁)

4(G₂)

3(S₂)

2(G₁)

1(S₁)

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

Unit

Gate-Source Voltage

V_GSS

±20

T_C=25^oC

T_C=70^oC

T_A=25^oC

T_A=70^oC

12.9

10.4

10.0⁽³⁾

8.0⁽³⁾

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current

Power Dissipation

I_D

I_DM

T_C=25^oC

T_C=70^oC

T_A=25^oC

T_A=70^oC

3.13

2.0

P_D

2.0⁽³⁾

1.28⁽³⁾

Single Pulse Avalanche Energy ⁽²⁾

E_AS

Junction and Storage Temperature Range

T_J, T_stg

-55~150

^oC

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient ⁽¹⁾

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

Rating

62.5

Unit

^oC/W

R_θJC

July. 2010. Version 1.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6

中文翻译

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