Datasheet > MDS3754ARH

MDS3754ARH

更新时间： 2024-10-15 01:17:11

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	814K
描述
P-Channel Trench MOSFET, -40V, -6.0A, 45m(ohm)

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MDS3754ARH 数据手册

MDS3754A

P-Channel Trench MOSFET, -40V, -6.0A, 45mΩ

General Description

Features

The MDS3754A uses advanced Magnachip’s Trench

MOSFET Technology to provided high performance in on-

state resistance, switching performance and reliability.



V_DS= -40V

I_D= -6.0 @ V_GS= -10V

R_DS(ON)

<45m @ V_GS= -10V

<60m @ V_GS= -4.5V

Low R_DS(ON), Low Gate Charge can be offering superior

benefit in the application.

Applications



Inverters

General purpose applications

5(D)

6(D)

7(D)

8(D)

4(G)

3(S)

2(S)

1(S)

Absolute Maximum Ratings (T_C=25^o)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

V_GSS

I_D

Rating

-40

Unit

Gate-Source Voltage

±20

Continuous Drain Current

(Note 1)

(Note 2)

-6.0

Pulsed Drain Current

I_DM

-50

Power Dissipation

P_D

2.5

^oC

Single Pulse Avalanche Energy

Junction and Storage Temperature Range

E_AS

T_J, T_stg

-55~+150

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

Rating

Unit

(Note 1)

^oC/W

R_θJC

June 2009. Version 1.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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