Datasheet > MDS1528URH

MDS1528URH

更新时间： 2024-11-19 01:22:55

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
5页	926K
描述
Single N-channel Trench MOSFET 30V, 11.9A, 18.8m(ohm)

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MDS1528URH 数据手册

MDS1528

Single N-channel Trench MOSFET 30V, 11.9A, 18.8mΩ

General Description

Features

The MDS1528 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDS1528 is suitable for DC/DC converter and

general purpose applications.



V_DS= 30V

I_D= 11.9A @V_GS= 10V

R_DS(ON)

< 18.8mΩ @V_GS= 10V

< 27.8mΩ @V_GS= 4.5V

100% UIL Tested

100% Rg Tested



5(D)

6(D)

7(D)

8(D)

4(G)

3(S)

2(S)

1(S)

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

Unit

Gate-Source Voltage

V_GSS

±20

11.9

9.5

8.7⁽³⁾

6.9⁽³⁾

T_C=25^oC

T_C=70^oC

T_A=25^oC

T_A=70^oC

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current

Power Dissipation

I_D

I_DM

T_C=25^oC

T_C=70^oC

T_A=25^oC

T_A=70^oC

4.7

3.0

P_D

2.5⁽³⁾

1.6⁽³⁾

Single Pulse Avalanche Energy ⁽²⁾

E_AS

Junction and Storage Temperature Range

T_J, T_stg

-55~150

^oC

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance, Junction-to-Ambient ⁽¹⁾

Thermal Resistance, Junction-to-Case

R_θJA

R_θJC

^oC/W

26.4

July. 2012. Version1.3

MagnaChip Semiconductor Ltd.

12 3 4 5

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