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MDP6K7.5C PDF预览

MDP6K7.5C

更新时间: 2024-11-09 19:19:27
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
2页 74K
描述
Trans Voltage Suppressor Diode, 600W, 6.4V V(RWM), Bidirectional, 1 Element, Silicon, 0.080 X 0.080 INCH, DIE-1

MDP6K7.5C 技术参数

生命周期:Obsolete零件包装代码:DIE
包装说明:S-XUUC-N针数:1
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.8
Is Samacsys:N最小击穿电压:7.13 V
最大钳位电压:11.3 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:S-XUUC-N最大非重复峰值反向功率耗散:600 W
元件数量:1封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:UNCASED CHIP
极性:BIDIRECTIONAL认证状态:Not Qualified
最大重复峰值反向电压:6.4 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子形式:NO LEAD端子位置:UPPER
Base Number Matches:1

MDP6K7.5C 数据手册

 浏览型号MDP6K7.5C的Datasheet PDF文件第2页 

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