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MDP7N60 PDF预览

MDP7N60

更新时间: 2024-11-10 01:22:55
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 983K
描述
N-Channel MOSFET 600V, 7A, 1.15(ohm)

MDP7N60 数据手册

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MDP7N60  
N-Channel MOSFET 600V, 7A, 1.15  
General Description  
Features  
The MDP7N60 uses advanced MagnaChip’s MOSFET  
Technology, which provides low on-state resistance, high  
switching performance and excellent quality.  
VDS = 600V  
VDS = 660V  
ID = 7.0A  
@ Tjmax  
@ VGS = 10V  
@ VGS = 10V  
RDS(ON) 1.15Ω  
MDP7N60 is suitable device for SMPS, high Speed switching  
and general purpose applications.  
Applications  
Power Supply  
PFC  
High Current, High Speed Switching  
Absolute Maximum Ratings (Ta = 25oC)  
Characteristics  
Drain-Source Voltage  
Symbol  
VDSS  
Rating  
600  
Unit  
V
Drain-Source Voltage @ Tjmax  
Gate-Source Voltage  
VDSS @ Tjmax  
VGSS  
660  
V
±30  
V
TC=25oC  
TC=100oC  
7.0  
A
Continuous Drain Current ()  
Pulsed Drain Current(1)  
Power Dissipation  
ID  
4.4  
A
IDM  
PD  
28  
A
TC=25oC  
131  
W
W/ oC  
Derate above 25 oC  
1.05  
13.1  
4.5  
(1)  
Repetitive Avalanche Energy EAR  
EAR  
Dv/dt  
EAS  
mJ  
V/ns  
mJ  
Peak Diode Recovery dv/dt(3)  
Single Pulse Avalanche Energy(4)  
220  
Junction and Storage Temperature Range  
Id limited by maximum junction temperature  
TJ, Tstg  
-55~150  
oC  
Thermal Characteristics  
Characteristics  
Thermal Resistance, Junction-to-Ambient(1)  
Thermal Resistance, Junction-to-Case(1)  
Symbol  
RθJA  
Rating  
62.5  
Unit  
oC/W  
RθJC  
0.95  
1
Dec. 2014 Version 2.2  
MagnaChip Semiconductor Ltd.  

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